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Nonvolatile Control of the Electronic Properties of In2-xCrxO3 Semiconductor Films by Ferroelectric Polarization Charge 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2019, 卷号: 11, 期号: 35, 页码: 32449
Authors:  Xu, Meng;  Yan, Jian-Min;  Guo, Lei;  Wang, Hui;  Xu, Zhi-Xue;  Yan, Ming-Yuan;  Lu, Yun-Long;  Gao, Guan-Yin;  Li, Xiao-Guang;  Luo, Hao-Su;  Chai, Yang;  Zheng, Ren-Kui
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ferroelectric field effect  ferroelectric single crystal  electronic properties  wide-band-gap oxide semiconductors films  magnetoresistance  
Nanostructure-enhanced magnetoelectric/magnetostrictive properties and reduced losses in self-assembled epitaxial CuFe2O4-BiFeO3 layers on Pb(Mg1/3Nb2/3)O-3-33at%PbTiO3 crystals 期刊论文
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2019, 卷号: 102, 期号: 9, 页码: 5192
Authors:  Tang, Xiao;  Leung, Chung Ming;  Gao, Min;  Winkler, Christopher;  Luo, Haosu;  Li, Jiefang;  Viehland, Dwight
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magnetic materials  magnetoelectric  nanostructure  piezoelectric  strain-engineering  
van der Waals epitaxy for highly tunable all-inorganic transparent flexible ferroelectric luminescent films 期刊论文
JOURNAL OF MATERIALS CHEMISTRY C, 2019, 卷号: 7, 期号: 27, 页码: 8310
Authors:  Zheng, Ming;  Li, Xue-Yan;  Ni, Hao;  Li, Xiao-Min;  Gao, Ju
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Room-Temperature Reversible and Nonvolatile Tunability of Electrical Properties of Cr-Doped In2O3 Semiconductor Thin Films Gated by Ferroelectric Single Crystal and Ionic Liquid 期刊论文
ADVANCED ELECTRONIC MATERIALS, 2019, 卷号: 5, 期号: 7
Authors:  Xu, Meng;  Yan, Jian-Min;  Chen, Ting-Wei;  Xu, Zhi-Xue;  Wang, Hui;  Guo, Lei;  Gao, Guan-Yin;  Yan, Shu-Ying;  Wang, Fei-Fei;  Zhang, Jin-Xing;  Zhao, Weiyao;  Li, Xiao-Guang;  Luo, Hao-Su;  Zheng, Ren-Kui
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electrical properties  ferroelectric field effect  ionic liquids  oxide semiconductors  PMN-PT single crystals  
Non-volatility using materials with only volatile properties: Vertically integrated magnetoelectric heterostructures and their potential for multi-level-cell devices 期刊论文
APPLIED PHYSICS LETTERS, 2019, 卷号: 114, 期号: 24
Authors:  Tang, Xiao;  Gao, Min;  Leung, Chung Ming;  Luo, Haosu;  Li, Jiefang;  Viehland, Dwight
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Cr-doped BaSnO3 nanoporous thin films with tunable band gap via a facile colloidal solution route 期刊论文
CHEMICAL PHYSICS, 2019, 卷号: 522, 页码: 91
Authors:  Zhang, Tong-Tong;  Gao, Xiang-Dong;  Wu, Yong-Qing;  Yang, Jing-Nan;  Li, Xiao-Min
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Thin films  Porous materials  Bandgap modulation  Nanostructure  
Manipulation of the Electronic Transport Properties of Charge-Transfer Oxide Thin Films of NdNiO3 Using Static and Electric-Field-Controllable Dynamic Lattice Strain 期刊论文
PHYSICAL REVIEW APPLIED, 2019, 卷号: 11, 期号: 3
Authors:  Yan, Jian-Min;  Xu, Meng;  Chen, Ting-Wei;  Yang, Ming-Min;  Liu, Fei;  Wang, Hui;  Guo, Lei;  Xu, Zhi-Xue;  Fan, Fang-Yuan;  Gao, Guan-Yin;  Dong, Si-Ning;  Li, Xiao-Guang;  Luo, Hao-Su;  Zhao, Weiyao;  Zheng, Ren-Kui
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Nonvolatile and Reversible Ferroelectric Control of Electronic Properties of Bi2Te3 Topological Insulator Thin Films Grown on Pb(Mg1/3Nb2/3)O-3-PbTiO3 Single Crystals 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2019, 卷号: 11, 期号: 9, 页码: 9548
Authors:  Yan, Jian-Min;  Xu, Zhi-Xue;  Chen, Ting-Wei;  Xu, Meng;  Zhang, Chao;  Zhao, Xu-Wen;  Liu, Fei;  Guo, Lei;  Yan, Shu-Ying;  Gao, Guan-Yin;  Wang, Fei-Fei;  Zhang, Jin-Xing;  Dong, Si-Ning;  Li, Xiao-Guang;  Luo, Hao-Su;  Zhao, Weiyao;  Zheng, Ren-Kui
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ferroelectric field effect  ferroelectric single crystal  electronic properties  topological insulator thin films  magneto resistance  surface state  
Epitaxial Codoped BaSnO3 thin films with tunable optical bandgap on MgO substrate 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2019, 卷号: 125, 期号: 3
Authors:  Gao, Dong-Sheng;  Gao, Xiang-Dong;  Wu, Yong-Qing;  Zhang, Tong-Tong;  Yang, Jing-Nan;  Li, Xiao-Min
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Progresses of magnetoelectric composite films based on PbMg1/3Nb2/3O3-PbTiO3 single-crystal substrates 期刊论文
ACTA PHYSICA SINICA, 2018, 卷号: 67, 期号: 15
Authors:  Xu Meng;  Yan Jian-Min;  Xu Zhi-Xue;  Guo Lei;  Zheng Ren-Kui;  Li Xiao-Guang
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magnetoelectric composite films  multiferroics  lattice strain effect  interfacial charge effect