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Orientation Preference of Transparent Conducting In2O3:Sn Films and its Formation Mechanism
Alternative TitleOrientation Preference of Transparent Conducting In2O3:Sn Films and its Formation Mechanism
Wan DY(万冬云); Chen P(陈平); Liang J(梁军); Li ST(李绍唐); Huang FQ(黄富强)
2012-02-21
Source PublicationACS Appl. Mater. Interfaces
ISSN1944-8244
Volume3Pages:4751-4755
Department能源材料研究中心
Subject Area材料科学
Indexed BySCI收录 ; EI收录
Language英语
Funding Project黄富强
Document Type期刊论文
Identifierhttp://ir.sic.ac.cn/handle/331005/679
Collection能量转换材料重点实验室_期刊论文
Corresponding AuthorHuang FQ(黄富强)
Recommended Citation
GB/T 7714
Wan DY,Chen P,Liang J,et al. Orientation Preference of Transparent Conducting In2O3:Sn Films and its Formation Mechanism[J]. ACS Appl. Mater. Interfaces,2012,3:4751-4755.
APA 万冬云,陈平,梁军,李绍唐,&黄富强.(2012).Orientation Preference of Transparent Conducting In2O3:Sn Films and its Formation Mechanism.ACS Appl. Mater. Interfaces,3,4751-4755.
MLA 万冬云,et al."Orientation Preference of Transparent Conducting In2O3:Sn Films and its Formation Mechanism".ACS Appl. Mater. Interfaces 3(2012):4751-4755.
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