KMS Shanghai Institute of Ceramics,Chinese Academy of Sciences
Orientation Preference of Transparent Conducting In2O3:Sn Films and its Formation Mechanism | |
Alternative Title | Orientation Preference of Transparent Conducting In2O3:Sn Films and its Formation Mechanism |
Wan DY(万冬云); Chen P(陈平); Liang J(梁军); Li ST(李绍唐); Huang FQ(黄富强) | |
2012-02-21 | |
Source Publication | ACS Appl. Mater. Interfaces
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ISSN | 1944-8244 |
Volume | 3Pages:4751-4755 |
Department | 能源材料研究中心 |
Subject Area | 材料科学 |
Indexed By | SCI收录 ; EI收录 |
Language | 英语 |
Funding Project | 黄富强 |
Document Type | 期刊论文 |
Identifier | http://ir.sic.ac.cn/handle/331005/679 |
Collection | 能量转换材料重点实验室_期刊论文 |
Corresponding Author | Huang FQ(黄富强) |
Recommended Citation GB/T 7714 | Wan DY,Chen P,Liang J,et al. Orientation Preference of Transparent Conducting In2O3:Sn Films and its Formation Mechanism[J]. ACS Appl. Mater. Interfaces,2012,3:4751-4755. |
APA | 万冬云,陈平,梁军,李绍唐,&黄富强.(2012).Orientation Preference of Transparent Conducting In2O3:Sn Films and its Formation Mechanism.ACS Appl. Mater. Interfaces,3,4751-4755. |
MLA | 万冬云,et al."Orientation Preference of Transparent Conducting In2O3:Sn Films and its Formation Mechanism".ACS Appl. Mater. Interfaces 3(2012):4751-4755. |
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File Name/Size | DocType | Version | Access | License | ||
2011-WDY-Orientation(349KB) | 开放获取 | License | Application Full Text |
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