Effect of thermal annealing on the defects and electrical properties of semi-insulating 6H-SiC

doi:10.1016/j.jcrysgro.2019.125399

SIC OpenIR

	Effect of thermal annealing on the defects and electrical properties of semi-insulating 6H-SiC
	Xu, TX; Liu, XC; Zhuo, SY; Huang, W; Gao, P; Xin, J; Shi, EW
	2020-02-01
Source Publication	JOURNAL OF CRYSTAL GROWTH
ISSN	0022-0248
Subtype	Article; Proceedings Paper
Abstract	Vanadium-doped 6H-SiC wafers were annealed at 950 degrees C, 1350 degrees C and 1650 degrees C in argon atmosphere for 1 h in order to investigate the thermal annealing effect on the defects and electrical properties. It was experimentally observed that the electrical and crystalline property of vanadium-doped 6H-SiC didn't obviously change after annealing at 950 degrees C and 1350 degrees C. However, the resistivity of vanadium-doped 6H-SiC dropped by 5-6 orders of magnitude after annealing at 1650 degrees C. The glow discharge mass spectrometry (GDMS), electron paramagnetic resonance (EPR), high resolution x-ray diffraction (HRXRD) and resistivity mapping measurements implied that both vanadium dopants and intrinsic defects were responsible for the semi-insulating property of the as-grown single crystal SiC. After annealing at high temperature (>= 1650 degrees C), the doped vanadium in single crystal SiC would partially evaporate and the left vanadium dopants might be not enough to compensate the unintentional donors/acceptors with the disappearance of silicon vacancy defects.
DOI	10.1016/j.jcrysgro.2019.125399
WOS Keyword	SPIN-RESONANCE ; POINT-DEFECTS ; HIGH-PURITY ; VANADIUM ; LEVEL
Language	英语
WOS Research Area	Crystallography ; Materials Science ; Physics
Publisher	ELSEVIER
Citation statistics
Document Type	期刊论文
Identifier	http://ir.sic.ac.cn/handle/331005/28349
Collection	中国科学院上海硅酸盐研究所
Recommended Citation GB/T 7714	Xu, TX,Liu, XC,Zhuo, SY,et al. Effect of thermal annealing on the defects and electrical properties of semi-insulating 6H-SiC[J]. JOURNAL OF CRYSTAL GROWTH,2020.
APA	Xu, TX.,Liu, XC.,Zhuo, SY.,Huang, W.,Gao, P.,...&Shi, EW.(2020).Effect of thermal annealing on the defects and electrical properties of semi-insulating 6H-SiC.JOURNAL OF CRYSTAL GROWTH.
MLA	Xu, TX,et al."Effect of thermal annealing on the defects and electrical properties of semi-insulating 6H-SiC".JOURNAL OF CRYSTAL GROWTH (2020).

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