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Multistate resistance switching in Bi/PMN-PT(111) heterostructures by electric and magnetic field
Xu, ZX; Yan, JM; Xu, M; Wang, H; Guo, L; Gao, GY; Zheng, RK
2020-02-01
Source PublicationJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN0957-4522
Issue4Pages:3585
SubtypeArticle
AbstractBi thin films were grown on (111)-oriented 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (PMN-PT) single-crystal substrates by pulsed laser deposition. Resistance of Bi/PMN-PT could be modulated by asymmetrical bipolar electric field in a reversible and nonvolatile manner at 300 K. By tuning asymmetrical bipolar electric field, different nonvolatile strain states could be generated in PMN-PT and transferred to Bi thin film, which leads to different nonvolatile resistance states. Furthermore, different resistance states of the Bi films could be achieved under different magnetic field at 300 K. The ferroelastic strain- and magnetic-field-modulated resistive properties in Bi/PMN-PT suggest a promising approach for multistate resistive memories.
DOI10.1007/s10854-020-02908-8
WOS KeywordNONVOLATILE ; TRANSITION
Language英语
WOS Research AreaEngineering ; Materials Science ; Physics
PublisherSPRINGER
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sic.ac.cn/handle/331005/28338
Collection中国科学院上海硅酸盐研究所
Recommended Citation
GB/T 7714
Xu, ZX,Yan, JM,Xu, M,et al. Multistate resistance switching in Bi/PMN-PT(111) heterostructures by electric and magnetic field[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2020(4):3585.
APA Xu, ZX.,Yan, JM.,Xu, M.,Wang, H.,Guo, L.,...&Zheng, RK.(2020).Multistate resistance switching in Bi/PMN-PT(111) heterostructures by electric and magnetic field.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS(4),3585.
MLA Xu, ZX,et al."Multistate resistance switching in Bi/PMN-PT(111) heterostructures by electric and magnetic field".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS .4(2020):3585.
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