SIC OpenIR
Tunable Magnetoresistance and Charge Carrier Density in Cr:In2O3/PbMg1/3Nb2/3O3-PbTiO3 Ferroelectric Field-Effect Devices
Xu, M; Chen, TW; Yan, JM; Guo, L; Wang, H; Gao, GY; Luo, HS; Chai, Y; Zheng, RK
2020-06-02
Source PublicationPHYSICAL REVIEW APPLIED
ISSN2331-7019
Issue6
SubtypeArticle
AbstractWe report the epitaxial growth of the Cr-doped In(2-x)CrxO(3) (x = 0.05) (Cr:In2O3) semiconducting thin films on perovskite-type (111)-oriented 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (PMN-PT) ferroelectric single-crystal substrates in the form of ferroelectric field-effect devices that allow us to obtain an in situ tuning of the electron carrier density and magnetoresistance (MR) as well as the resistance in a reversible and nonvolatile manner, thereby stringently disclosing the relationship between the MR and the electron carrier density. Specifically, for the thinnest 25-nm Cr:In2O3 film the polarization switching of the PMN-PT from the positively polarized P(r)( )(+)state to the negatively polarized P-r(-) state results in a large increase in the resistance and MR. Particularly, at T = 10 K, the polarization switching induces reversible and nonvolatile changes in the magnitude and sign of MR, demonstrating strong coupling between the MR and the electron carrier density. Moreover, regardless of the polarization states of PMN-PT, MR for films with different thicknesses can be quite well described by a combination of the two-band model and the semiempirical model proposed by Khosla and Fischer based on which the positive MR (PMR) and negative MR (NMR) could be disentangled into positive component [MR(+)] and negative component [MR(-)], respectively. We find that the polarization-switching-induced large decrease in the PMR and the change in the sign of MR from positive to negative is mainly due to the rapid decrease in the MR(+), demonstrating that the coupling between MR(+) and electron carrier density plays a dominant role in controlling the magnitude and sign of MR.
DOI10.1103/PhysRevApplied.13.064006
WOS KeywordEFFECT TRANSISTORS ; FERROMAGNETISM
Language英语
WOS Research AreaPhysics
PublisherAMER PHYSICAL SOC
Citation statistics
Document Type期刊论文
Identifierhttp://ir.sic.ac.cn/handle/331005/27990
Collection中国科学院上海硅酸盐研究所
Recommended Citation
GB/T 7714
Xu, M,Chen, TW,Yan, JM,et al. Tunable Magnetoresistance and Charge Carrier Density in Cr:In2O3/PbMg1/3Nb2/3O3-PbTiO3 Ferroelectric Field-Effect Devices[J]. PHYSICAL REVIEW APPLIED,2020(6).
APA Xu, M.,Chen, TW.,Yan, JM.,Guo, L.,Wang, H.,...&Zheng, RK.(2020).Tunable Magnetoresistance and Charge Carrier Density in Cr:In2O3/PbMg1/3Nb2/3O3-PbTiO3 Ferroelectric Field-Effect Devices.PHYSICAL REVIEW APPLIED(6).
MLA Xu, M,et al."Tunable Magnetoresistance and Charge Carrier Density in Cr:In2O3/PbMg1/3Nb2/3O3-PbTiO3 Ferroelectric Field-Effect Devices".PHYSICAL REVIEW APPLIED .6(2020).
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Xu, M]'s Articles
[Chen, TW]'s Articles
[Yan, JM]'s Articles
Baidu academic
Similar articles in Baidu academic
[Xu, M]'s Articles
[Chen, TW]'s Articles
[Yan, JM]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Xu, M]'s Articles
[Chen, TW]'s Articles
[Yan, JM]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.