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Detecting band profiles of devices with conductive atomic force microscopy
Li, RR; Taniguchi, T; Watanabe, K; Xue, JM
2020-07-01
Source PublicationREVIEW OF SCIENTIFIC INSTRUMENTS
ISSN0034-6748
Issue7
SubtypeArticle
AbstractBand profiles of electronic devices are of fundamental importance in determining their properties. A technique that can map the band profile of both the interior and edges of a device at the nanometer scale is highly demanded. Conventional scanning tunneling spectroscopy (STS) can map band structure at the atomic scale but is limited to the interior of large and conductive samples. Here, we develop contact-mode STS based on a conductive atomic force microscope that can remove these constraints. With this technique, we map the band profile of MoS2 transistors with nanometer resolution at room temperature. A band bending of 0.6 eV within 18 nm of the edges of MoS2 on an insulating substrate is discovered. This technique will be of great use for both fundamental and applied studies of various electronic devices.
DOI10.1063/5.0008412
WOS KeywordMOS2 TRANSISTORS ; EDGE STATES ; GAP
Language英语
WOS Research AreaInstruments & Instrumentation ; Physics
PublisherAMER INST PHYSICS
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Document Type期刊论文
Identifierhttp://ir.sic.ac.cn/handle/331005/27924
Collection中国科学院上海硅酸盐研究所
Recommended Citation
GB/T 7714
Li, RR,Taniguchi, T,Watanabe, K,et al. Detecting band profiles of devices with conductive atomic force microscopy[J]. REVIEW OF SCIENTIFIC INSTRUMENTS,2020(7).
APA Li, RR,Taniguchi, T,Watanabe, K,&Xue, JM.(2020).Detecting band profiles of devices with conductive atomic force microscopy.REVIEW OF SCIENTIFIC INSTRUMENTS(7).
MLA Li, RR,et al."Detecting band profiles of devices with conductive atomic force microscopy".REVIEW OF SCIENTIFIC INSTRUMENTS .7(2020).
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