SIC OpenIR
Experimental Optical Properties of Single Nitrogen Vacancy Centers in Silicon Carbide at Room Temperature
Wang, JF; Liu, ZH; Yan, FF; Li, Q; Yang, XG; Guo, LP; Zhou, X; Huang, W; Xu, JS; Li, CF; Guo, GC
2020-07-15
Source PublicationACS PHOTONICS
ISSN2330-4022
Issue7Pages:1611
SubtypeArticle
AbstractRobust single spin color centers in solid state systems with telecom wavelength emission are vital to quantum photonics and quantum networks. The nitrogen vacancy (NV) centers in silicon carbide (SiC) have become promising platforms for those applications. However, little is known about the detailed optical properties of the NV centers. In this paper, we investigate the photophysics of the single NV centers in 4H-SiC. The results demonstrate that the NV centers comprise three energy-level electronic structures. Particularly, for c-axis NV centers, both the excitation and the emission polarization degrees are larger than 90%. Photon purity and photostability of the single NV centers are maintained at an elevated temperature up to 400 K. These experiments constitute an important step toward using the NV centers in SiC with respect to quantum photonics.
DOI10.1021/acsphotonics.0c00218
WOS KeywordCOHERENT CONTROL ; ELECTRON SPINS
Language英语
WOS Research AreaScience & Technology - Other Topics ; Materials Science ; Optics ; Physics
PublisherAMER CHEMICAL SOC
Citation statistics
Document Type期刊论文
Identifierhttp://ir.sic.ac.cn/handle/331005/27904
Collection中国科学院上海硅酸盐研究所
Recommended Citation
GB/T 7714
Wang, JF,Liu, ZH,Yan, FF,et al. Experimental Optical Properties of Single Nitrogen Vacancy Centers in Silicon Carbide at Room Temperature[J]. ACS PHOTONICS,2020(7):1611.
APA Wang, JF.,Liu, ZH.,Yan, FF.,Li, Q.,Yang, XG.,...&Guo, GC.(2020).Experimental Optical Properties of Single Nitrogen Vacancy Centers in Silicon Carbide at Room Temperature.ACS PHOTONICS(7),1611.
MLA Wang, JF,et al."Experimental Optical Properties of Single Nitrogen Vacancy Centers in Silicon Carbide at Room Temperature".ACS PHOTONICS .7(2020):1611.
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