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High infrared emissivity of SiC-AlN ceramics at room temperature
Zhu, M; Chen, J; Ran, N; Zheng, JQ; Huang, ZR; Liu, XJ; Chen, ZM
2020-08-01
Source PublicationJOURNAL OF THE EUROPEAN CERAMIC SOCIETY
ISSN0955-2219
Issue10Pages:3528
SubtypeArticle
AbstractSiC-AlN ceramics were fabricated by pressureless sintering with B4C-C as sintering additives. The effects of AlN contents on infrared emissivity, thermal conductivity and electrical properties of SiC ceramics were investigated. The improvement of total emissivity is slight before 3 wt%AlN, but impressive after 3 wt%AlN. The significant increase of the emissivity for AlN content higher than 3 wt% could be explained via DFT calculation, that the impurity energy level formed by N atom doping into 4H-SiC and the lattice distortion are mainly responsible for it. Besides, the highest total emissivity is 0.775 when the content of AlN is 5 wt%. Additionally, more AlN solid solution results in a decrease in thermal conductivity and an enhancement in electrical resistivity. There is always a compromise among the three properties of SiC-AlN ceramics.
DOI10.1016/j.jeurceramsoc.2020.04.012
WOS KeywordRESISTANCE ; COATINGS ; CARBON
Language英语
WOS Research AreaMaterials Science
PublisherELSEVIER SCI LTD
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sic.ac.cn/handle/331005/27877
Collection中国科学院上海硅酸盐研究所
Recommended Citation
GB/T 7714
Zhu, M,Chen, J,Ran, N,et al. High infrared emissivity of SiC-AlN ceramics at room temperature[J]. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY,2020(10):3528.
APA Zhu, M.,Chen, J.,Ran, N.,Zheng, JQ.,Huang, ZR.,...&Chen, ZM.(2020).High infrared emissivity of SiC-AlN ceramics at room temperature.JOURNAL OF THE EUROPEAN CERAMIC SOCIETY(10),3528.
MLA Zhu, M,et al."High infrared emissivity of SiC-AlN ceramics at room temperature".JOURNAL OF THE EUROPEAN CERAMIC SOCIETY .10(2020):3528.
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