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Ti-Alloying of BaZrS3 Chalcogenide Perovskite for Photovoltaics
Wei, XC; Hui, HL; Perera, S; Sheng, A; Watson, DF; Sun, YY; Jia, QX; Zhang, SB; Zeng, H
2020-08-04
Source PublicationACS OMEGA
ISSN2470-1343
Issue30Pages:18579
SubtypeArticle
AbstractBaZrS3, a prototypical chalcogenide perovskite, has been shown to possess a direct band gap, an exceptionally strong near band edge light absorption, and good carrier transport. Coupled with its great stability, nontoxicity with earth-abundant elements, it is thus a promising candidate for thin film solar cells. However, its reported band gap in the range of 1.7-1.8 eV is larger than the optimal value required to reach the Shockley-Queisser limit of a single-junction solar cell. Here, we report the synthesis of Ba(Zr1-xTix)S-3 perovskite compounds with a reduced band gap. It is found that Ti-alloying is extremely effective in band gap reduction of BaZrS3: a mere 4 atom % alloying decreases the band gap from 1.78 to 1.51 eV, resulting in a theoretical maximum power conversion efficiency of 32%. Higher Ti-alloying concentration is found to destabilize the distorted chalcogenide perovskite phase.
DOI10.1021/acsomega.0c00740
WOS KeywordSOLAR-CELLS ; SULFIDES ; LENGTHS
Language英语
WOS Research AreaChemistry
PublisherAMER CHEMICAL SOC
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sic.ac.cn/handle/331005/27850
Collection中国科学院上海硅酸盐研究所
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GB/T 7714
Wei, XC,Hui, HL,Perera, S,et al. Ti-Alloying of BaZrS3 Chalcogenide Perovskite for Photovoltaics[J]. ACS OMEGA,2020(30):18579.
APA Wei, XC.,Hui, HL.,Perera, S.,Sheng, A.,Watson, DF.,...&Zeng, H.(2020).Ti-Alloying of BaZrS3 Chalcogenide Perovskite for Photovoltaics.ACS OMEGA(30),18579.
MLA Wei, XC,et al."Ti-Alloying of BaZrS3 Chalcogenide Perovskite for Photovoltaics".ACS OMEGA .30(2020):18579.
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