SIC OpenIR
Wafer-scale 4H-silicon carbide-on-insulator (4H-SiCOI) platform for nonlinear integrated optical devices
Yi, AL; Zheng, Y; Huang, H; Lin, JJ; Yan, YQ; You, TG; Huang, K; Zhang, SB; Shen, C; Zhou, M; Huang, W; Zhang, JX; Zhou, SQ; Ou, HY; Ou, X
2020-09-05
Source PublicationOPTICAL MATERIALS
ISSN0925-3467
SubtypeArticle
Abstract4H-silicon carbide-on-insulator (4H-SiCOI) serves as a novel and high efficient integration platform for nonlinear optics and quantum photonics. The realization of wafer-scale fabrication of single-crystalline semi-insulating 4H-SiC film on Si (100) substrate using the ion-cutting and layer transferring technique was demonstrated in this work. The thermodynamics of 4H-SiC surface blistering is investigated via observing the blistering phenomenon with a series of implanted fluences and annealing temperatures. Surface tomography and the depth dependent film quality of the 4H-SiC have been extensively studied by employing scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Moreover, X-ray diffraction (XRD) was carried out and the diffraction spectrum reveals a narrow peak with a full width at half maximum (FWHM) of 75.6 arcsec, indicating a good maintenance of the single-crystalline phase for the prepared thin film of 4H-SiC as compared to its bulk counterpart. With the single-crystalline 4H-SiCOI, we have successfully fabricated a micro-ring resonator with a quality factor as high as 6.6 x 10(4). The reported 4H-SiCOI wafer provides a feasible monolithic platform for integrated photonic applications.
DOI10.1016/j.optmat.2020.109990
WOS KeywordHYDROGEN IMPLANTATION ; SILICON ; EXFOLIATION ; TEMPERATURE ; RESONATORS ; CUT ; SI
Language英语
WOS Research AreaMaterials Science ; Optics
PublisherELSEVIER
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Document Type期刊论文
Identifierhttp://ir.sic.ac.cn/handle/331005/27775
Collection中国科学院上海硅酸盐研究所
Recommended Citation
GB/T 7714
Yi, AL,Zheng, Y,Huang, H,et al. Wafer-scale 4H-silicon carbide-on-insulator (4H-SiCOI) platform for nonlinear integrated optical devices[J]. OPTICAL MATERIALS,2020.
APA Yi, AL.,Zheng, Y.,Huang, H.,Lin, JJ.,Yan, YQ.,...&Ou, X.(2020).Wafer-scale 4H-silicon carbide-on-insulator (4H-SiCOI) platform for nonlinear integrated optical devices.OPTICAL MATERIALS.
MLA Yi, AL,et al."Wafer-scale 4H-silicon carbide-on-insulator (4H-SiCOI) platform for nonlinear integrated optical devices".OPTICAL MATERIALS (2020).
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