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Observation of above-room-temperature ferromagnetism in chemically stable layered semiconductor RhI3
Che, XL; Zhang, Z; Wang, D; Zhao, W; Wang, T; Zhao, P; Mu, G; Huang, J; Huang, FQ
2020-10-01
Source Publication2D MATERIALS
ISSN2053-1583
Issue4
SubtypeArticle
AbstractTwo-dimensional (2D) ferromagnetic semiconductors with a room-temperature Curie temperature (T-c) are required for next-generation spintronic devices, but the current candidates suffer from a lowT(c)and poor chemical stability. Here, a new layered compound RhI(3)is discovered to be an above-room-temperature ferromagnetic semiconductor. This compound crystallizes in a monoclinic crystal system of space groupC2/m, with the unit cell ofa= 6.773(8) angstrom,b= 11.721(2) angstrom,c= 6.811(8) angstrom and beta= 108.18(4) degrees. The structure consists of honeycomb rhodium layers separated by iodine-iodine van der Waals gap. Chemically stable RhI(3)possesses an optical bandgap of 1.17 eV. Its robust ferromagnetism with aT(c)of above 400 K, which is far higher than 61 K for the well-known CrI(3)and the highest among the bulk 2D ferromagnetic semiconductors. The robust intrinsic ferromagnetic response is attributed to the Rh(2+)and exchange interactions between I-pand Rh-delectrons induced by iodine vacancies. This work reveals that RhI(3)is a prime candidate for spintronic devices above room temperature and provides a strategy to obtain high temperature 2D ferromagnetic semiconductors by introducing vacancies.
DOI10.1088/2053-1583/abb3ba
WOS KeywordMAGNETISM
Language英语
WOS Research AreaMaterials Science
PublisherIOP PUBLISHING LTD
Citation statistics
Document Type期刊论文
Identifierhttp://ir.sic.ac.cn/handle/331005/27714
Collection中国科学院上海硅酸盐研究所
Recommended Citation
GB/T 7714
Che, XL,Zhang, Z,Wang, D,et al. Observation of above-room-temperature ferromagnetism in chemically stable layered semiconductor RhI3[J]. 2D MATERIALS,2020(4).
APA Che, XL.,Zhang, Z.,Wang, D.,Zhao, W.,Wang, T.,...&Huang, FQ.(2020).Observation of above-room-temperature ferromagnetism in chemically stable layered semiconductor RhI3.2D MATERIALS(4).
MLA Che, XL,et al."Observation of above-room-temperature ferromagnetism in chemically stable layered semiconductor RhI3".2D MATERIALS .4(2020).
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