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Effect of Sintering Temperature on the Properties of Highly Electrical Resistive SiC Ceramics as a Function of Y2O3-Er2O3 Additions
Ge, S; Yao, XM; Liu, YY; Duan, H; Huang, ZR; Liu, XJ
2020-11-01
Source PublicationMATERIALS
Issue21
SubtypeArticle
AbstractSilicon carbide (SiC) ceramics with Y2O3-Er2O3 as sintering additives were prepared by spark plasma sintering (SPS). The effects of sintering temperatures and Y2O3-Er2O3 contents on the microstructure, thermal conductivity, electrical, and mechanical properties were investigated. The increasing of sintering temperatures promoted the densification of SiC ceramics, thus increasing the thermal conductivity and electrical resistivity. With the increase of the sintering additive contents, the electrical resistivity increased due to the formation of the electrical insulating network; and the thermal conductivity first increased and then decreased, which was related to the content and distribution of the secondary phase among the SiC grains. The SiC ceramics sintered at 2000 degrees C with 9 wt.% Y2O3-Er2O3 exhibited higher electrical resistivity and thermal conductivity, which were 4.28 x 10(9) omega center dot cm and 96.68 W/m center dot K, respectively.
DOI10.3390/ma13214768
WOS KeywordHIGH-THERMAL-CONDUCTIVITY ; SILICON ; AL2O3
Language英语
WOS Research AreaMaterials Science
PublisherMDPI
Citation statistics
Document Type期刊论文
Identifierhttp://ir.sic.ac.cn/handle/331005/27649
Collection中国科学院上海硅酸盐研究所
Recommended Citation
GB/T 7714
Ge, S,Yao, XM,Liu, YY,et al. Effect of Sintering Temperature on the Properties of Highly Electrical Resistive SiC Ceramics as a Function of Y2O3-Er2O3 Additions[J]. MATERIALS,2020(21).
APA Ge, S,Yao, XM,Liu, YY,Duan, H,Huang, ZR,&Liu, XJ.(2020).Effect of Sintering Temperature on the Properties of Highly Electrical Resistive SiC Ceramics as a Function of Y2O3-Er2O3 Additions.MATERIALS(21).
MLA Ge, S,et al."Effect of Sintering Temperature on the Properties of Highly Electrical Resistive SiC Ceramics as a Function of Y2O3-Er2O3 Additions".MATERIALS .21(2020).
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