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Tunable electronic properties and Schottky barrier in a graphene/WSe2 heterostructure under out-of-plane strain and an electric field
Zhang, R; Hao, GQ; Ye, XJ; Gao, SP; Li, HB
2020-11-07
Source PublicationPHYSICAL CHEMISTRY CHEMICAL PHYSICS
ISSN1463-9076
Issue41Pages:23699
SubtypeArticle
AbstractTuning the electrical transport behavior and reducing the Schottky barrier height of nanoelectronic devices remain a great challenge. To solve this issue, the electronic properties and Schottky barrier of the graphene/WSe2 heterostructure are investigated by the first-principles method under out-of-plane strain and an electric field. Our results show that the WSe2 monolayer and graphene could form a stable van der Waals heterostructure and the intrinsic electronic properties are well preserved. Furthermore, a transformation of a Schottky contact from the n-type to p-type occurs at d = 3.87 angstrom and E = +0.06 V angstrom(-1). In addition, an ohmic contact is formed with E = -0.50, +/- 0.60 V angstrom(-1). Lastly, the effective masses of electrons and holes are calculated to be 0.057m(0) and -0.055m(0) at the equilibrium state, respectively, indicating that the heterostructure has a high carrier mobility. Our research will provide promising approaches for the future design and development of graphene/WSe2 nano-field effect transistors.
DOI10.1039/d0cp04160b
WOS KeywordTRANSITION-METAL DICHALCOGENIDES ; DER-WAALS HETEROSTRUCTURES ; PHOTOCATALYTIC PERFORMANCE ; MONOLAYER MOS2 ; HETEROJUNCTIONS ; CONTACT ; WSE2 ; WS2 ; PHOTOLUMINESCENCE ; TRANSISTORS
Language英语
WOS Research AreaChemistry ; Physics
PublisherROYAL SOC CHEMISTRY
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Document Type期刊论文
Identifierhttp://ir.sic.ac.cn/handle/331005/27632
Collection中国科学院上海硅酸盐研究所
Recommended Citation
GB/T 7714
Zhang, R,Hao, GQ,Ye, XJ,et al. Tunable electronic properties and Schottky barrier in a graphene/WSe2 heterostructure under out-of-plane strain and an electric field[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2020(41):23699.
APA Zhang, R,Hao, GQ,Ye, XJ,Gao, SP,&Li, HB.(2020).Tunable electronic properties and Schottky barrier in a graphene/WSe2 heterostructure under out-of-plane strain and an electric field.PHYSICAL CHEMISTRY CHEMICAL PHYSICS(41),23699.
MLA Zhang, R,et al."Tunable electronic properties and Schottky barrier in a graphene/WSe2 heterostructure under out-of-plane strain and an electric field".PHYSICAL CHEMISTRY CHEMICAL PHYSICS .41(2020):23699.
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