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Epitaxial growth mechanism of perovskite (111) SrTiO3 on wurtzite (0002) GaN with single unit- cell TiN buffer layers
Li, Guanjie; Li, Xiaomin; Chen, Yongbo; Jia, Shasha; Xu, Xiaoke
2019-01-28
Source PublicationAPPLIED SURFACE SCIENCE
ISSN0169-4332
Volume465Pages:1055
SubtypeArticle
AbstractEpitaxial integration of SrTiO3 (STO) with GaN plays a key role in exploring monolithic and multifunctional GaN-based devices. Herein, high quality perovskite (1 1 1) STO thin films were epitaxially grown on wurtzite (0 0 0 2) GaN substrates with novel designed single unit-cell TiN buffer layers by pulsed laser deposition. Epitaxial relationship model is proposed to be (1 1 1) [1 (1) over bar 0] STO//(1 1 1)[1 (1) over bar 0] TiN//(0 0 0 2)[1 1 (2) over bar 0] GaN. Furthermore, interfacial structure and epitaxial relationship of STO/TiN/GaN heterostructure is directly confirmed on atomic scale by high-resolution transmission electron microscopy. With the insertion of TiN, lattice mismatch between (1 1 1) STO and (0 0 0 2) GaN is reduced tremendously from 13.3% to 7.9%. More significantly, relaxation process and N atom vacancies in surface atom layer of single unit-cell (1 1 1) TiN could further release lattice mismatch strain between STO and GaN, and thus enormously facilitates epitaxial growth of STO. Moreover, the formation mechanism of twin domain structures and tilted twin grain-boundaries in STO is also discussed to clarify the epitaxial growth process of perovskite (1 1 1) STO on wurtzite (0 0 0 2) GaN.
KeywordEpitaxial growth SrTiO3 GaN TiN buffer layer Pulsed laser deposition
DOI10.1016/j.apsusc.2018.09.237
WOS KeywordCRYSTALLINE OXIDES ; THIN-FILMS ; INTEGRATION
Language英语
WOS Research AreaChemistry ; Materials Science ; Physics
PublisherELSEVIER SCIENCE BV
Citation statistics
Document Type期刊论文
Identifierhttp://ir.sic.ac.cn/handle/331005/27562
Collection中国科学院上海硅酸盐研究所
Recommended Citation
GB/T 7714
Li, Guanjie,Li, Xiaomin,Chen, Yongbo,et al. Epitaxial growth mechanism of perovskite (111) SrTiO3 on wurtzite (0002) GaN with single unit- cell TiN buffer layers[J]. APPLIED SURFACE SCIENCE,2019,465:1055.
APA Li, Guanjie,Li, Xiaomin,Chen, Yongbo,Jia, Shasha,&Xu, Xiaoke.(2019).Epitaxial growth mechanism of perovskite (111) SrTiO3 on wurtzite (0002) GaN with single unit- cell TiN buffer layers.APPLIED SURFACE SCIENCE,465,1055.
MLA Li, Guanjie,et al."Epitaxial growth mechanism of perovskite (111) SrTiO3 on wurtzite (0002) GaN with single unit- cell TiN buffer layers".APPLIED SURFACE SCIENCE 465(2019):1055.
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