KMS Shanghai Institute of Ceramics，Chinese Academy of Sciences
| Epitaxial growth mechanism of perovskite (111) SrTiO3 on wurtzite (0002) GaN with single unit- cell TiN buffer layers | |
| Li, Guanjie; Li, Xiaomin; Chen, Yongbo; Jia, Shasha; Xu, Xiaoke | |
| 2019-01-28 | |
| Source Publication | APPLIED SURFACE SCIENCE
 |
| ISSN | 0169-4332 |
| Volume | 465Pages:1055 |
| Subtype | Article |
| Abstract | Epitaxial integration of SrTiO3 (STO) with GaN plays a key role in exploring monolithic and multifunctional GaN-based devices. Herein, high quality perovskite (1 1 1) STO thin films were epitaxially grown on wurtzite (0 0 0 2) GaN substrates with novel designed single unit-cell TiN buffer layers by pulsed laser deposition. Epitaxial relationship model is proposed to be (1 1 1) [1 (1) over bar 0] STO//(1 1 1)[1 (1) over bar 0] TiN//(0 0 0 2)[1 1 (2) over bar 0] GaN. Furthermore, interfacial structure and epitaxial relationship of STO/TiN/GaN heterostructure is directly confirmed on atomic scale by high-resolution transmission electron microscopy. With the insertion of TiN, lattice mismatch between (1 1 1) STO and (0 0 0 2) GaN is reduced tremendously from 13.3% to 7.9%. More significantly, relaxation process and N atom vacancies in surface atom layer of single unit-cell (1 1 1) TiN could further release lattice mismatch strain between STO and GaN, and thus enormously facilitates epitaxial growth of STO. Moreover, the formation mechanism of twin domain structures and tilted twin grain-boundaries in STO is also discussed to clarify the epitaxial growth process of perovskite (1 1 1) STO on wurtzite (0 0 0 2) GaN. |
| Keyword | Epitaxial growth SrTiO3 GaN TiN buffer layer Pulsed laser deposition |
| DOI | 10.1016/j.apsusc.2018.09.237 |
| WOS Keyword | CRYSTALLINE OXIDES ; THIN-FILMS ; INTEGRATION |
| Language | 英语 |
| WOS Research Area | Chemistry ; Materials Science ; Physics |
| Publisher | ELSEVIER SCIENCE BV |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.sic.ac.cn/handle/331005/27562 |
| Collection | 中国科学院上海硅酸盐研究所 |
| Recommended Citation GB/T 7714 | Li, Guanjie,Li, Xiaomin,Chen, Yongbo,et al. Epitaxial growth mechanism of perovskite (111) SrTiO3 on wurtzite (0002) GaN with single unit- cell TiN buffer layers[J]. APPLIED SURFACE SCIENCE,2019,465:1055. |
| APA | Li, Guanjie,Li, Xiaomin,Chen, Yongbo,Jia, Shasha,&Xu, Xiaoke.(2019).Epitaxial growth mechanism of perovskite (111) SrTiO3 on wurtzite (0002) GaN with single unit- cell TiN buffer layers.APPLIED SURFACE SCIENCE,465,1055. |
| MLA | Li, Guanjie,et al."Epitaxial growth mechanism of perovskite (111) SrTiO3 on wurtzite (0002) GaN with single unit- cell TiN buffer layers".APPLIED SURFACE SCIENCE 465(2019):1055. |
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