Anisotropic resistance switching in hexagonal manganites
Wang, Xueyun; Yang, Danni; Zhang, Hui-Min; Song, Chuangye; Wang, Jing; Tan, Guotai; Zheng, Renkui; Dong, Shuai; Cheong, Sang-Wook; Zhang, Jinxing
Source PublicationPHYSICAL REVIEW B
Abstract( )The distribution and manipulation of oxygen defects, including oxygen vacancies (O-v) and interstitial oxygen (O-t), directly results in modifications in a variety of emergent functionalities in transition metal oxides. This is applicable in nanoscale control, which is a key issue in data and energy storage devices, such as resistive switching memory. Among all the oxygen-defect-related topics, nanoscale oxygen defect migration paths have a direct impact on the performance of memory devices, and are intrinsically determined by the structural anisotropy. Here, we use layered single-crystalline ferroelectric, hexagonal manganites (h-REMnO3) to demonstrate O-i-migration-induced nanoscale manipulation of conductance in the ab plane. Conversely, this unique phenomenon cannot be achieved along the c axis. Furthermore, a density functional theory calculation reveals that the energy barriers are lower for planar migrations of O-i, when compared to out-of-plane migration, and are responsible for such anisotropic resistance switching.
WOS Research AreaMaterials Science ; Physics
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Cited Times:7[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
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GB/T 7714
Wang, Xueyun,Yang, Danni,Zhang, Hui-Min,et al. Anisotropic resistance switching in hexagonal manganites[J]. PHYSICAL REVIEW B,2019,99(5).
APA Wang, Xueyun.,Yang, Danni.,Zhang, Hui-Min.,Song, Chuangye.,Wang, Jing.,...&Zhang, Jinxing.(2019).Anisotropic resistance switching in hexagonal manganites.PHYSICAL REVIEW B,99(5).
MLA Wang, Xueyun,et al."Anisotropic resistance switching in hexagonal manganites".PHYSICAL REVIEW B 99.5(2019).
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