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Nonvolatile and Reversible Ferroelectric Control of Electronic Properties of Bi2Te3 Topological Insulator Thin Films Grown on Pb(Mg1/3Nb2/3)O-3-PbTiO3 Single Crystals
Yan, Jian-Min; Xu, Zhi-Xue; Chen, Ting-Wei; Xu, Meng; Zhang, Chao; Zhao, Xu-Wen; Liu, Fei; Guo, Lei; Yan, Shu-Ying; Gao, Guan-Yin; Wang, Fei-Fei; Zhang, Jin-Xing; Dong, Si-Ning; Li, Xiao-Guang; Luo, Hao-Su; Zhao, Weiyao; Zheng, Ren-Kui
2019-03-06
Source PublicationACS APPLIED MATERIALS & INTERFACES
ISSN1944-8244
Volume11Issue:9Pages:9548
SubtypeArticle
AbstractSingle-phase (00l)-oriented Bi2Te3 topological insulator thin films have been deposited on (111)-oriented ferroelectric 0.71Pb(Mg1/3Nb2/3)O-3-0.29PbTiO(3) (PMN- PT) single-crystal substrates. Taking advantage of the nonvolatile polarization charges induced by the polarization direction switching of PMN-PT substrates at room temperature, the carrier density, Fermi level, magnetoconductance, 6 conductance channel, phase coherence length, and quantum 4 corrections to the conductance can be in situ modulated in a reversible and nonvolatile manner. Specifically, upon the polarization switching from the positively poled P-r(+) state (i.e., polarization direction points to the film) to the negatively poled P-r(-)(i.e., polarization direction points to the bottom electrode) state, both the electron carrier density and the Fermi wave vector decrease significantly, reflecting a shift of the Fermi level toward the Dirac point. The polarization switching from P-r(+) to P-r(-) also results in significant increase of the conductance channel alpha from -0.15 to -0.3 and a decrease of the phase coherence length from 200 to 80 nm at T = 2 K as well as a reduction of the electron-electron interaction. All these results demonstrate that electric-voltage control of physical properties using PMN-PT as both substrates and gating materials provides a simple and a straightforward approach to realize reversible and nonvolatile tuning of electronic properties of topological thin films and may be further extended to study carrier density-related quantum transport properties of other quantum matter.
Keywordferroelectric field effect ferroelectric single crystal electronic properties topological insulator thin films magneto resistance surface state
DOI10.1021/acsami.8b20406
Language英语
WOS Research AreaScience & Technology - Other Topics ; Materials Science
PublisherAMER CHEMICAL SOC
Citation statistics
Cited Times:5[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sic.ac.cn/handle/331005/27286
Collection中国科学院上海硅酸盐研究所
Recommended Citation
GB/T 7714
Yan, Jian-Min,Xu, Zhi-Xue,Chen, Ting-Wei,et al. Nonvolatile and Reversible Ferroelectric Control of Electronic Properties of Bi2Te3 Topological Insulator Thin Films Grown on Pb(Mg1/3Nb2/3)O-3-PbTiO3 Single Crystals[J]. ACS APPLIED MATERIALS & INTERFACES,2019,11(9):9548.
APA Yan, Jian-Min.,Xu, Zhi-Xue.,Chen, Ting-Wei.,Xu, Meng.,Zhang, Chao.,...&Zheng, Ren-Kui.(2019).Nonvolatile and Reversible Ferroelectric Control of Electronic Properties of Bi2Te3 Topological Insulator Thin Films Grown on Pb(Mg1/3Nb2/3)O-3-PbTiO3 Single Crystals.ACS APPLIED MATERIALS & INTERFACES,11(9),9548.
MLA Yan, Jian-Min,et al."Nonvolatile and Reversible Ferroelectric Control of Electronic Properties of Bi2Te3 Topological Insulator Thin Films Grown on Pb(Mg1/3Nb2/3)O-3-PbTiO3 Single Crystals".ACS APPLIED MATERIALS & INTERFACES 11.9(2019):9548.
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