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Large current nanosecond pulse generating circuit for driving semiconductor laser diode
Wen, Shaocong; Wang, Mao; Xie, Jie; Wu, Dongmin
2019-04-01
Source PublicationMICROWAVE AND OPTICAL TECHNOLOGY LETTERS
ISSN0895-2477
Volume61Issue:4Pages:867
SubtypeArticle
AbstractThe semiconductor laser diode SPL LL90_3, which integrates the RC charge-discharge circuit and a MOSFET switching device, is usually used for pulsing laser in the light detection and ranging system with a rated peak power of 70 W at 30 ns pulse-width. To further increase the peak power and reduce the pulse width and rising edge, a driving circuit with an avalanche transistor used as a pre-switching device is proposed. A trigger pulse with about 10 ns'-pulse-width is obtained to drive the laser diode. At the same time, the pulsing laser's peak power can reach 141 W at the testing repetition rate of 55 kHz.
Keywordcircuit modeling driver circuit light detection and ranging (Lidar) semiconductor lasers time-of-flight (TOF)
DOI10.1002/mop.31654
Language英语
WOS Research AreaEngineering ; Optics
PublisherWILEY
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sic.ac.cn/handle/331005/27230
Collection中国科学院上海硅酸盐研究所
Recommended Citation
GB/T 7714
Wen, Shaocong,Wang, Mao,Xie, Jie,et al. Large current nanosecond pulse generating circuit for driving semiconductor laser diode[J]. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS,2019,61(4):867.
APA Wen, Shaocong,Wang, Mao,Xie, Jie,&Wu, Dongmin.(2019).Large current nanosecond pulse generating circuit for driving semiconductor laser diode.MICROWAVE AND OPTICAL TECHNOLOGY LETTERS,61(4),867.
MLA Wen, Shaocong,et al."Large current nanosecond pulse generating circuit for driving semiconductor laser diode".MICROWAVE AND OPTICAL TECHNOLOGY LETTERS 61.4(2019):867.
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