KMS Shanghai Institute of Ceramics，Chinese Academy of Sciences
| Low Contact Resistivity and Interfacial Behavior of p-Type NbFeSb/Mo Thermoelectric Junction | |
| Shen, Jiajun; Wang, Zhenyi; Chu, Jing; Bai, Shengqiang; Zhao, Xinbing; Chen, Lidong; Zhu, Tiejun | |
| 2019-04-17 | |
| Source Publication | ACS APPLIED MATERIALS & INTERFACES
 |
| ISSN | 1944-8244 |
| Volume | 11Issue:15Pages:14182 |
| Subtype | Article |
| Abstract | Half-Heusler compounds are a class of promising thermoelectric (TE) materials for power generation. However, the large contact resistivity at the interface between TE legs and metal electrode of the TE device seriously hinders the full play of the material performance. Here we report an Ohmic contact for the junction of p-type Nb0.8Ti0.2FeSb and Mo electrode with a low contact resistivity of <1 mu O cm(2) due to the matching of work functions between Nb0.8Ti0.2FeSb and FeMo interlayer. The interface carrier transport is dominated by the field emission and consequently a strong tunneling electric current is obtained due to the high doping level and relatively low dielectric constant of p-type Nb0.8Ti0.2FeSb semiconductor. The interface microstructure analysis indicates that there is a FeMo alloy interlayer with a thickness of 5 mu m and a mixing layer of Nb0.8Ti0.2FeSb and Nb3Ti with a thickness of 25 mu m. After a long time heat treatment at 1073 K, the FeMo alloy transforms into a FeSb2 layer, while the mixing layer is occupied totally by Nb3Ti. Due to the relatively high electrical resistivity for FeSb2 phase, the increasing content of Nb3Ti and the crack at both sides of Nb3Ti interlayer, the contact resistivity rises up to 18.4 mu O cm(2) after 32 days aging. These results demonstrate that the applicability of low contact resistivity NbFeSb/Mo junction in high performance TE devices. |
| Keyword | thermoelectric materials half-Heusler compounds electrode contact resistivity interfacial microstructure Ohmic contact |
| DOI | 10.1021/acsami.9b02124 |
| Language | 英语 |
| WOS Research Area | Science & Technology - Other Topics ; Materials Science |
| Publisher | AMER CHEMICAL SOC |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.sic.ac.cn/handle/331005/27175 |
| Collection | 中国科学院上海硅酸盐研究所 |
| Recommended Citation GB/T 7714 | Shen, Jiajun,Wang, Zhenyi,Chu, Jing,et al. Low Contact Resistivity and Interfacial Behavior of p-Type NbFeSb/Mo Thermoelectric Junction[J]. ACS APPLIED MATERIALS & INTERFACES,2019,11(15):14182. |
| APA | Shen, Jiajun.,Wang, Zhenyi.,Chu, Jing.,Bai, Shengqiang.,Zhao, Xinbing.,...&Zhu, Tiejun.(2019).Low Contact Resistivity and Interfacial Behavior of p-Type NbFeSb/Mo Thermoelectric Junction.ACS APPLIED MATERIALS & INTERFACES,11(15),14182. |
| MLA | Shen, Jiajun,et al."Low Contact Resistivity and Interfacial Behavior of p-Type NbFeSb/Mo Thermoelectric Junction".ACS APPLIED MATERIALS & INTERFACES 11.15(2019):14182. |
| Files in This Item: | There are no files associated with this item. | |||||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment