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Responsivity and noise characteristics of AlGaN/GaN-HEMT terahertz detectors at elevated temperatures
Tian, Zhi-Feng; Xu, Peng; Yu, Yao; Sun, Jian-Dong; Feng, Wei; Ding, Qing-Feng; Meng, Zhan-Wei; Li, Xiang; Cui, Jin-Hua; Zheng, Zhong-Xin; Li, Xin-Xing; Jin, Lin; Qin, Hua; Sun, Yun-Fei
2019-05-01
Source PublicationCHINESE PHYSICS B
ISSN1674-1056
Volume28Issue:5
SubtypeArticle
AbstractThe responsivity and the noise of a detector determine the sensitivity. Thermal energy usually affects both the responsivity and the noise spectral density. In this work, the noise characteristics and responsivity of an antenna-coupled Al-GaN/GaN high-electron-mobility-transistor (HEMT) terahertz detector are evaluated at temperatures elevated from 300 K to 473 K. Noise spectrum measurement and a simultaneous measurement of the source-drain conductance and the terahertz photocurrent allow for detailed analysis of the electrical characteristics, the photoresponse, and the noise behavior. The responsivity is reduced from 59 mA/W to 11 mA/W by increasing the detector temperature from 300 K to 473 K. However, the noise spectral density maintains rather constantly around 1-2 pA/Hz(1/2) at temperatures below 448 K, above which the noise spectrum abruptly shifts from Johnson-noise type into flicker-noise type and the noise density is increased up to one order of magnitude. The noise-equivalent power (NEP) is increased from 22 pW/Hz(1/2) at 300 K to 60 pW/Hz(1/2) at 448 K mainly due to the reduction in mobility. Above 448 K, the NEP is increased up to 1000 pW/Hz(1/2) due to the strongly enhanced noise. The sensitivity can be recovered by cooling the detector back to room temperature.
Keywordterahertz detection gallium nitride noise spectrum responsivity
DOI10.1088/1674-1056/28/5/058501
Language英语
WOS Research AreaPhysics
PublisherIOP PUBLISHING LTD
Citation statistics
Document Type期刊论文
Identifierhttp://ir.sic.ac.cn/handle/331005/27140
Collection中国科学院上海硅酸盐研究所
Recommended Citation
GB/T 7714
Tian, Zhi-Feng,Xu, Peng,Yu, Yao,et al. Responsivity and noise characteristics of AlGaN/GaN-HEMT terahertz detectors at elevated temperatures[J]. CHINESE PHYSICS B,2019,28(5).
APA Tian, Zhi-Feng.,Xu, Peng.,Yu, Yao.,Sun, Jian-Dong.,Feng, Wei.,...&Sun, Yun-Fei.(2019).Responsivity and noise characteristics of AlGaN/GaN-HEMT terahertz detectors at elevated temperatures.CHINESE PHYSICS B,28(5).
MLA Tian, Zhi-Feng,et al."Responsivity and noise characteristics of AlGaN/GaN-HEMT terahertz detectors at elevated temperatures".CHINESE PHYSICS B 28.5(2019).
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