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High-voltage vertical GaN-on-GaN Schottky barrier diode using fluorine ion implantation treatment
Liu, Zirui; Wang, Jianfeng; Gu, Hong; Zhang, Yumin; Wang, Weifan; Xiong, Rui; Xu, Ke
2019-05-01
Source PublicationAIP ADVANCES
ISSN2158-3226
Volume9Issue:5
SubtypeArticle
AbstractThis paper reports on a high-voltage vertical GaN Schottky barrier diode (SBD) using fluorine (F) ion implantation treatment. Compared with the GaN SBD without F implantation, this SBD effectively enhanced the breakdown voltage from 155V to 775V and significantly reduced the reverse leakage current by 105 times. These results indicate that the F-implanted SBD showed improved reverse capability. In addition, a high I-on/I-off ratio of 10(8) and high Schottky barrier height of 0.92 eV were also achieved for this diode with F implantation. The influence of F ion implantation in this SBD was also discussed in detail. It was found that F ion implantation to GaN could not only create a high-resistant region as effective edge termination but be employed for adjusting the carrier density of the surface of GaN, which were both helpful to achieve high breakdown voltage and suppress reverse leakage current. This work shows the potential for fabricating high-voltage and low-leakage SBDs using F ion implantation treatment. (c)) 2019 Author(s).
DOI10.1063/1.5100251
Language英语
WOS Research AreaScience & Technology - Other Topics ; Materials Science ; Physics
PublisherAMER INST PHYSICS
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Document Type期刊论文
Identifierhttp://ir.sic.ac.cn/handle/331005/27129
Collection中国科学院上海硅酸盐研究所
Recommended Citation
GB/T 7714
Liu, Zirui,Wang, Jianfeng,Gu, Hong,et al. High-voltage vertical GaN-on-GaN Schottky barrier diode using fluorine ion implantation treatment[J]. AIP ADVANCES,2019,9(5).
APA Liu, Zirui.,Wang, Jianfeng.,Gu, Hong.,Zhang, Yumin.,Wang, Weifan.,...&Xu, Ke.(2019).High-voltage vertical GaN-on-GaN Schottky barrier diode using fluorine ion implantation treatment.AIP ADVANCES,9(5).
MLA Liu, Zirui,et al."High-voltage vertical GaN-on-GaN Schottky barrier diode using fluorine ion implantation treatment".AIP ADVANCES 9.5(2019).
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