Suppression of graphene nucleation by plasma treatment of Cu foil for the rapid growth of large-size single-crystal graphene

doi:10.1016/j.carbon.2019.02.025

SIC OpenIR

	Suppression of graphene nucleation by plasma treatment of Cu foil for the rapid growth of large-size single-crystal graphene
	Cheng, Yuan; Bi, Hui; Che, Xiangli; Li, Dezeng; Ji, Wenlong; Huang, Fuqiang
	2019-06-01
Source Publication	CARBON
ISSN	0008-6223
Volume	147 Pages:51
Subtype	Article
Abstract	Chemical vapor deposition (CVD) method generally used for the fabrication of single-crystal graphene is still imperfect in the suppression of nucleation density, which is detrimental to the domain size of single-crystal graphene to a great extent. Herein, we have successfully developed a new strategy to realize the controllable nucleation by the plasma treatment of Cu foil, and carry out the rapid growth of singlecrystal graphene, combined with the program heating and concentration gradient growth method during the CVD-grown stage. The plasma treatment can effectively remove impurities of Cu foil surface, which reduces the active sites for single-crystal graphene nucleation. Meanwhile, CuO nanoparticles are formed on the Cu foil surface by the plasma treatment, which can be reduced and produce oxygen after annealing at high temperature in H-2 atmosphere to promote the rapid growth of graphene and suppress graphene nucleation. Eventually, we have achieved the synthesis of hexagon-shaped single-crystal graphene with the low defects, large-size of similar to 5 mm, fast growth rate of 2.5mmh(-1), high uniformity (monolayer coverage of >= 90%) and high field-effect mobility of >= 12,500 cm(2) V-1 s(-1). Our work provides a facile and effective method for the fabrication of large-size single-crystal graphene, paving the way towards future potential applications of single-crystal graphene in the industrial level. (C) 2019 Elsevier Ltd. All rights reserved.
Keyword	Graphene Plasma treatment CuO nanoparticles Program heating Concentration gradient
DOI	10.1016/j.carbon.2019.02.025
Language	英语
WOS Research Area	Chemistry ; Materials Science
Publisher	PERGAMON-ELSEVIER SCIENCE LTD
Citation statistics	Cited Times:9[WOS] [WOS Record] [Related Records in WOS]
Document Type	期刊论文
Identifier	http://ir.sic.ac.cn/handle/331005/27079
Collection	中国科学院上海硅酸盐研究所
Recommended Citation GB/T 7714	Cheng, Yuan,Bi, Hui,Che, Xiangli,et al. Suppression of graphene nucleation by plasma treatment of Cu foil for the rapid growth of large-size single-crystal graphene[J]. CARBON,2019,147:51.
APA	Cheng, Yuan,Bi, Hui,Che, Xiangli,Li, Dezeng,Ji, Wenlong,&Huang, Fuqiang.(2019).Suppression of graphene nucleation by plasma treatment of Cu foil for the rapid growth of large-size single-crystal graphene.CARBON,147,51.
MLA	Cheng, Yuan,et al."Suppression of graphene nucleation by plasma treatment of Cu foil for the rapid growth of large-size single-crystal graphene".CARBON 147(2019):51.

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