Non-volatility using materials with only volatile properties: Vertically integrated magnetoelectric heterostructures and their potential for multi-level-cell devices

doi:10.1063/1.5094430

SIC OpenIR

	Non-volatility using materials with only volatile properties: Vertically integrated magnetoelectric heterostructures and their potential for multi-level-cell devices
	Tang, Xiao; Gao, Min; Leung, Chung Ming; Luo, Haosu; Li, Jiefang; Viehland, Dwight
	2019-06-17
Source Publication	APPLIED PHYSICS LETTERS
ISSN	0003-6951
Volume	114 Issue:24
Subtype	Article
Abstract	Different (1-3) heterostructures, such as BiFeO3-CoFe2O4 and BiFeO3-CuFe2O4 on Pb(Mg1/3Nb2/3)(0.74)Ti0.26O3 (PMN-26PT), were selected for study as possible materials for magnetoelectric (ME) random access memory. The (1-3) heterostructures were deposited, and multimagnetic states were found under different E-field (E) conditions. Upon removal of E, two possible remnant magnetization states remained stable. If an H-field (H) was also applied, two additional stable remnant magnetization states were found. Our investigations demonstrate (1-3) heterostructures with nonvolatility even though the individual phases/substrates had only volatile properties. This simplifies materials selection for multistate systems based on these heterostructures, averting difficulties with compositional nonuniformity and property repeatability, in particular, with regard to PMN-xPT crystal substrates. With such N4 magnetic state systems, a multilevel-cell memory device could readily be built with high ME coupling and numerous accessible magnetic states.
DOI	10.1063/1.5094430
Language	英语
WOS Research Area	Physics
Publisher	AMER INST PHYSICS
Citation statistics	Cited Times:4[WOS] [WOS Record] [Related Records in WOS]
Document Type	期刊论文
Identifier	http://ir.sic.ac.cn/handle/331005/27044
Collection	中国科学院上海硅酸盐研究所
Recommended Citation GB/T 7714	Tang, Xiao,Gao, Min,Leung, Chung Ming,et al. Non-volatility using materials with only volatile properties: Vertically integrated magnetoelectric heterostructures and their potential for multi-level-cell devices[J]. APPLIED PHYSICS LETTERS,2019,114(24).
APA	Tang, Xiao,Gao, Min,Leung, Chung Ming,Luo, Haosu,Li, Jiefang,&Viehland, Dwight.(2019).Non-volatility using materials with only volatile properties: Vertically integrated magnetoelectric heterostructures and their potential for multi-level-cell devices.APPLIED PHYSICS LETTERS,114(24).
MLA	Tang, Xiao,et al."Non-volatility using materials with only volatile properties: Vertically integrated magnetoelectric heterostructures and their potential for multi-level-cell devices".APPLIED PHYSICS LETTERS 114.24(2019).

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