KMS Shanghai Institute of Ceramics，Chinese Academy of Sciences
| Transmittance change with thickness for polycrystalline VO2 films deposited at room temperature | |
| Yang, Yan; Cao, Xun; Sun, Guangyao; Long, Shiwei; Chang, Tianci; Li, Xiaozhe; Jin, Ping | |
| 2019-06-30 | |
| Source Publication | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| ISSN | 0925-8388 |
| Volume | 791Pages:648 |
| Subtype | Article |
| Abstract | In this work, polycrystalline VO2 thin films have been prepared on BK7 glass substrates by DC magnetron sputtering at room temperature with a post-annealing treatment at 450 degrees C, and relative thickness dependence of the semiconductor-metal transition (SMT) properties have been systematically investigated. It revealed that the prepared VO2 films exhibited unique surfaces composed of particles with various sizes, which became larger with increased film thickness. Different luminous transmittance between the metallic phase and semiconductor phase can be obtained by changing the film thickness based on the optical interference theory. The optimum thickness of VO2 films was around 90 nm with high Delta T-sol of 9.7% and relatively high T(l)(um)( )of 36.4% (higher than theoretical 29.1%), which is a recommendable optical property for practical application. The critical SMT temperature fluctuated when film thickness increased, and the transition speed of the heating process got slower overall with thickness decreasing, which might be caused by mechanical stress between films and substrates. In addition, the transition speed of cooling process turned slower with thickness of VO2 films increasing, which can be ascribed to the slower heat dissipation of thicker films than that of thinner films during the cooling process. These results might give an indication for creating or designing potential materials based on the thickness dependence of phase transition properties of VO2 films. (C) 2019 Elsevier B.V. All rights reserved. |
| Keyword | Vanadium dioxide Thickness Phase transition Polycrystalline Thin film |
| DOI | 10.1016/j.jallcom.2019.03.278 |
| Language | 英语 |
| WOS Research Area | Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering |
| Publisher | ELSEVIER SCIENCE SA |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.sic.ac.cn/handle/331005/27032 |
| Collection | 中国科学院上海硅酸盐研究所 |
| Recommended Citation GB/T 7714 | Yang, Yan,Cao, Xun,Sun, Guangyao,et al. Transmittance change with thickness for polycrystalline VO2 films deposited at room temperature[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2019,791:648. |
| APA | Yang, Yan.,Cao, Xun.,Sun, Guangyao.,Long, Shiwei.,Chang, Tianci.,...&Jin, Ping.(2019).Transmittance change with thickness for polycrystalline VO2 films deposited at room temperature.JOURNAL OF ALLOYS AND COMPOUNDS,791,648. |
| MLA | Yang, Yan,et al."Transmittance change with thickness for polycrystalline VO2 films deposited at room temperature".JOURNAL OF ALLOYS AND COMPOUNDS 791(2019):648. |
| Files in This Item: | There are no files associated with this item. | |||||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment