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Room-Temperature Reversible and Nonvolatile Tunability of Electrical Properties of Cr-Doped In2O3 Semiconductor Thin Films Gated by Ferroelectric Single Crystal and Ionic Liquid
Xu, Meng; Yan, Jian-Min; Chen, Ting-Wei; Xu, Zhi-Xue; Wang, Hui; Guo, Lei; Gao, Guan-Yin; Yan, Shu-Ying; Wang, Fei-Fei; Zhang, Jin-Xing; Zhao, Weiyao; Li, Xiao-Guang; Luo, Hao-Su; Zheng, Ren-Kui
2019-07-01
Source PublicationADVANCED ELECTRONIC MATERIALS
ISSN2199-160X
Volume5Issue:7
SubtypeArticle
AbstractIntegration of different functional materials into a device in which the physical properties can be tuned using an electric field in a reversible and nonvolatile manner is highly desired for the fabrication of compact and energy-efficient multifunctional electronic devices. The integration of In2O3-based semiconductor thin films with ferroelectric 0.71PbMg(1/3)Nb(2/3)O(3)-0.29PbTiO(3) (PMN-0.29PT) single crystals in ferroelectric-field-effect-transistor devices that allow for the tuning of carrier density, carrier type, Fermi level, and their related properties in a reversible and nonvolatile manner, is reported. Specifically, gating of In2-xCrxO3 (x = 0, 0.02, 0.05, 0.08, 0.11) films with a PMN-0.29PT layer provides a means to reversibly tune and modulate the resistivity of the films up to an on-and-off ratio of 5.2 x 10(4)% in a nonvolatile manner at room temperature. Such resistivity modulation is associated with reversible and nonvolatile transformation of the carrier type between n-type and p-type due to polarization switching. Additionally, reversible switching of resistivity is realized utilizing DEME-TFSI ionic liquid as a top-gate material. These results demonstrate that electrical-voltage control of physical properties using PMN-xPT as both substrate and gating material provides a highly effective approach to study the carrier-density/type-related physical properties of semiconductor films.
Keywordelectrical properties ferroelectric field effect ionic liquids oxide semiconductors PMN-PT single crystals
DOI10.1002/aelm.201900212
Language英语
WOS Research AreaScience & Technology - Other Topics ; Materials Science ; Physics
PublisherWILEY
Citation statistics
Document Type期刊论文
Identifierhttp://ir.sic.ac.cn/handle/331005/26997
Collection中国科学院上海硅酸盐研究所
Recommended Citation
GB/T 7714
Xu, Meng,Yan, Jian-Min,Chen, Ting-Wei,et al. Room-Temperature Reversible and Nonvolatile Tunability of Electrical Properties of Cr-Doped In2O3 Semiconductor Thin Films Gated by Ferroelectric Single Crystal and Ionic Liquid[J]. ADVANCED ELECTRONIC MATERIALS,2019,5(7).
APA Xu, Meng.,Yan, Jian-Min.,Chen, Ting-Wei.,Xu, Zhi-Xue.,Wang, Hui.,...&Zheng, Ren-Kui.(2019).Room-Temperature Reversible and Nonvolatile Tunability of Electrical Properties of Cr-Doped In2O3 Semiconductor Thin Films Gated by Ferroelectric Single Crystal and Ionic Liquid.ADVANCED ELECTRONIC MATERIALS,5(7).
MLA Xu, Meng,et al."Room-Temperature Reversible and Nonvolatile Tunability of Electrical Properties of Cr-Doped In2O3 Semiconductor Thin Films Gated by Ferroelectric Single Crystal and Ionic Liquid".ADVANCED ELECTRONIC MATERIALS 5.7(2019).
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