Gate-Tunable Electrical Transport in Thin 2M-WS2 Flakes
Che, Xiangli; Deng, Yujun; Fang, Yuqiang; Pan, Jie; Yu, Yijun; Huang, Fuqiang
AbstractElectrolyte gating has been employed as an effective way to modulate the electronic properties of transition metal dichalcogenides (TMDs) by carrier doping over a wide range. Here, the carrier density of a new metastable phase of TMD material 2M-WS2 is controlled by electrolyte gating to achieve reversible transitions between the superconducting state, metallic state, and insulating state. Pristine 2M-WS2 has a superconducting transition temperature (T-c) of 8.9 K with a hole-type carrier density of 9.05 x 10(21) cm(-3) at 100 K. A gate voltage (V-g) is applied between the sample and a side gate, which are both immersed in a droplet of gel-like Li-ion electrolyte (LiClO4 dissolved in polyethylene oxide matrix). When V-g = -3.5 V, the sample is in its pristine superconducting phase. With increasing V-g, the lithium ions gradually intercalate into the layered sample and tune it from a superconductor to an insulator. By precise tuning of V-g in this device, the entire phase diagram of 2M-WS2 over a large range of carrier density is obtained.
Keywordgating monoclinic phase phase diagram superconductor WS2
WOS Research AreaScience & Technology - Other Topics ; Materials Science ; Physics
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Document Type期刊论文
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GB/T 7714
Che, Xiangli,Deng, Yujun,Fang, Yuqiang,et al. Gate-Tunable Electrical Transport in Thin 2M-WS2 Flakes[J]. ADVANCED ELECTRONIC MATERIALS,2019,5(10).
APA Che, Xiangli,Deng, Yujun,Fang, Yuqiang,Pan, Jie,Yu, Yijun,&Huang, Fuqiang.(2019).Gate-Tunable Electrical Transport in Thin 2M-WS2 Flakes.ADVANCED ELECTRONIC MATERIALS,5(10).
MLA Che, Xiangli,et al."Gate-Tunable Electrical Transport in Thin 2M-WS2 Flakes".ADVANCED ELECTRONIC MATERIALS 5.10(2019).
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