Investigations on the electrical properties, domain structure, and local piezoelectric response in 0.3Pb(In1/2Nb1/2)-0.4Pb(Mg1/3Nb2/3)-0.3PbTiO(3) single crystal

doi:10.1007/s00339-019-2952-7

SIC OpenIR

	Investigations on the electrical properties, domain structure, and local piezoelectric response in 0.3Pb(In1/2Nb1/2)-0.4Pb(Mg1/3Nb2/3)-0.3PbTiO(3) single crystal
	Wang, Yuchun; Xie, Qingxiu; Wu, Yang; Zhao, Xiangyong; Tang, Yanxue; Duan, Zhihua; Shi, Wangzhou; Luo, Haosu; Wang, Feifei; Wang, Tao
	2019-09-01
Source Publication	APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN	0947-8396
Volume	125 Issue:9
Subtype	Article
Abstract	High-Curie temperature relaxor ferroelectric single crystals attracted attention recently due to the excellent global electrical properties for electromechanical devices. In this work, the electrical properties, domain structure, and local piezoelectric response of ternary 0.3Pb(In1/2Nb1/2)-0.4Pb(Mg1/3Nb2/3)-0.3PbTiO(3) (0.3PIN-0.4PMN-0.3PT) single crystal was investigated. Large electric field-induced strain with little hysteresis was obtained in -oriented high-quality crystal. Nanosized fingerprint pattern domain of similar to 100-300 nm with obvious local piezoelectric response was observed. The temperature-dependent dielectric spectrum revealed a ferroelectric rhombohedral to tetragonal phase transition at 106 degrees C, obviously higher than that of binary 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) single-crystal (similar to 80 degrees C). The evolution of the ferroelectric property and strain response was also studied at elevated temperature. The temperature dependence of the PFM results demonstrated that the surface domain structure of the 0.3PIN-0.4PMN-0.3PT single crystals could still be detected above the Curie temperature. The local piezoelectric hysteresis loop exhibited strong dependence on the DC bias field and obvious local butterfly shape displacement curve could be induced at 180 degrees C under larger local DC field.
DOI	10.1007/s00339-019-2952-7
Language	英语
WOS Research Area	Materials Science ; Physics
Publisher	SPRINGER HEIDELBERG
Citation statistics	Cited Times:1[WOS] [WOS Record] [Related Records in WOS]
Document Type	期刊论文
Identifier	http://ir.sic.ac.cn/handle/331005/26869
Collection	中国科学院上海硅酸盐研究所
Recommended Citation GB/T 7714	Wang, Yuchun,Xie, Qingxiu,Wu, Yang,et al. Investigations on the electrical properties, domain structure, and local piezoelectric response in 0.3Pb(In1/2Nb1/2)-0.4Pb(Mg1/3Nb2/3)-0.3PbTiO(3) single crystal[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2019,125(9).
APA	Wang, Yuchun.,Xie, Qingxiu.,Wu, Yang.,Zhao, Xiangyong.,Tang, Yanxue.,...&Wang, Tao.(2019).Investigations on the electrical properties, domain structure, and local piezoelectric response in 0.3Pb(In1/2Nb1/2)-0.4Pb(Mg1/3Nb2/3)-0.3PbTiO(3) single crystal.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,125(9).
MLA	Wang, Yuchun,et al."Investigations on the electrical properties, domain structure, and local piezoelectric response in 0.3Pb(In1/2Nb1/2)-0.4Pb(Mg1/3Nb2/3)-0.3PbTiO(3) single crystal".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 125.9(2019).

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