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Nonvolatile Control of the Electronic Properties of In2-xCrxO3 Semiconductor Films by Ferroelectric Polarization Charge
Xu, Meng; Yan, Jian-Min; Guo, Lei; Wang, Hui; Xu, Zhi-Xue; Yan, Ming-Yuan; Lu, Yun-Long; Gao, Guan-Yin; Li, Xiao-Guang; Luo, Hao-Su; Chai, Yang; Zheng, Ren-Kui
2019-09-04
Source PublicationACS APPLIED MATERIALS & INTERFACES
ISSN1944-8244
Volume11Issue:35Pages:32449
SubtypeArticle
AbstractA series of Cr-doped In2-xCrxO3 (ICO) semiconductor thin films were epitaxially grown on (111)-oriented 0.71Pb(Mg1/3Nb2/3)O-3-0.29PbTiO(3) (PMN-0.29PT) single-crystal substrates by the pulsed laser deposition. Upon the application of an electric field to the PMN-0.29PT substrate along the thickness direction, we realized in situ, reversible, and nonvolatile control of the electronic properties and Fermi level of the films, which are manifested by abundant physical phenomena such as the n-type to p-type trans- formation, metal-semiconductor transition, metal-insulator transition, crossover of the magnetoresistance (MR) from negative to positive, and a large nonvolatile on-and-off ratio of 5.5 X 10(4)% at room temperature. We also strictly disclose that both the sign and the magnitude of MR are determined by the electron carrier density of ICO films, which could modify the s-d exchange interaction and weak localization effect. Our results demonstrate that the ferroelectric gating approach using PMN-PT can be utilized to gain deeper insight into the carrier-density-related electronic properties of In2O3-based semiconductors and provide a simple and energy efficient way to construct multifunctional devices which can utilize the unique properties of composite materials.
Keywordferroelectric field effect ferroelectric single crystal electronic properties wide-band-gap oxide semiconductors films magnetoresistance
DOI10.1021/acsami.9b07967
Language英语
WOS Research AreaScience & Technology - Other Topics ; Materials Science
PublisherAMER CHEMICAL SOC
Citation statistics
Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sic.ac.cn/handle/331005/26852
Collection中国科学院上海硅酸盐研究所
Recommended Citation
GB/T 7714
Xu, Meng,Yan, Jian-Min,Guo, Lei,et al. Nonvolatile Control of the Electronic Properties of In2-xCrxO3 Semiconductor Films by Ferroelectric Polarization Charge[J]. ACS APPLIED MATERIALS & INTERFACES,2019,11(35):32449.
APA Xu, Meng.,Yan, Jian-Min.,Guo, Lei.,Wang, Hui.,Xu, Zhi-Xue.,...&Zheng, Ren-Kui.(2019).Nonvolatile Control of the Electronic Properties of In2-xCrxO3 Semiconductor Films by Ferroelectric Polarization Charge.ACS APPLIED MATERIALS & INTERFACES,11(35),32449.
MLA Xu, Meng,et al."Nonvolatile Control of the Electronic Properties of In2-xCrxO3 Semiconductor Films by Ferroelectric Polarization Charge".ACS APPLIED MATERIALS & INTERFACES 11.35(2019):32449.
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