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K-x[Bi4-xMNxS6], Design of a Highly Selective Ion Exchange Material and Direct Gap 2D Semiconductor
Wang, Ruiqi; Chen, Haijie; Mao, Yi; Hadar, Ido; Bu, Kejun; Zhang, Xian; Pan, Jie; Gu, Yuhao; Guo, Zhongnan; Huang, Fuqiang; Kanatzidis, Mercouri G.
2019-10-23
Source PublicationJOURNAL OF THE AMERICAN CHEMICAL SOCIETY
ISSN0002-7863
Volume141Issue:42Pages:16903
SubtypeArticle
AbstractLayered sulfides with high selectivity for binding heavy metal ions and radionuclide ions are promising materials in effluent treatment and water purification. Here we present a rationally designed layered sulfide K-x[Bi4-xMnxS6] (x = 1.28) deriving from the Bi2Se3-structure type by targeted substitution to generate quintuple [Bi4-xMnxS6](x-) layers and K+ cations between them. The material has dual functionality: it is an attractive semiconductor with a bandgap of 1.40 eV and also an environmental remediation ion-exchange material. The compound is paramagnetic, and optical adsorption spectroscopy and DFT electronic structure calculations reveal that it possesses a direct band gap and a work function of 5.26 eV. The K+ ions exchange readily with alkali or alkaline-earth ions (Rb+, Cs+, and Sr2+) or soft ions (Pb2+, Cd2+, Cr3+, and Zn2+). Furthermore, when the ions are depleted the Mn2+ ions in the Bi2Se3-type slabs can also be replaced by soft ions, achieving large adsorption capacities. The ion exchange reactions of K-x[Bi4-xMnxS6] can be used to create new materials of the type M-x[Bi4-xMnxS6] in a low temperature kinetically controlled manner with significantly different electronic structures. The K-x[Bi4-xMnxS6] (x = 1.28) exhibits efficient capture of Cd2+ and Pb2+ ions with high distribution coefficient, K-d (10(7) mL/g), and exchange capacities of 221.2 and 342.4 mg/g, respectively. The material exhibits excellent capacities even in high concentration of competitive ions and over a broad pH range (2.5-11.0). The results highlight the promise of the K-x[Bi4-xMnxS6] (x = 1.28) phase to serve not only as a highly selective adsorbent for industrial and nuclear wastewater but also as a magnetic 2D semiconductor for optoelectronic applications.
DOI10.1021/jacs.9b08674
Language英语
WOS Research AreaChemistry
PublisherAMER CHEMICAL SOC
Citation statistics
Document Type期刊论文
Identifierhttp://ir.sic.ac.cn/handle/331005/26761
Collection中国科学院上海硅酸盐研究所
Recommended Citation
GB/T 7714
Wang, Ruiqi,Chen, Haijie,Mao, Yi,et al. K-x[Bi4-xMNxS6], Design of a Highly Selective Ion Exchange Material and Direct Gap 2D Semiconductor[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,2019,141(42):16903.
APA Wang, Ruiqi.,Chen, Haijie.,Mao, Yi.,Hadar, Ido.,Bu, Kejun.,...&Kanatzidis, Mercouri G..(2019).K-x[Bi4-xMNxS6], Design of a Highly Selective Ion Exchange Material and Direct Gap 2D Semiconductor.JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,141(42),16903.
MLA Wang, Ruiqi,et al."K-x[Bi4-xMNxS6], Design of a Highly Selective Ion Exchange Material and Direct Gap 2D Semiconductor".JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 141.42(2019):16903.
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