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Seamless joining of silicon carbide ceramics through an sacrificial interlayer Of Dy3Si2C2
Wan, Peng; Li, Mian; Xu, Kai; Wu, Haibo; Chang, Keke; Zhou, Xiaobing; Ding, Xiangdong; Huang, Zhengren; Zong, Hongxiang; Huang, Qing
2019-12-01
Source PublicationJOURNAL OF THE EUROPEAN CERAMIC SOCIETY
ISSN0955-2219
Volume39Issue:16Pages:5457
SubtypeArticle
AbstractA ternary carbide Dy3Si2C2 coating was fabricated on the surface of SiC through a molten salt technique. Using the Dy3Si2C2 coating as the joining interlayer, seamless joining of SiC ceramic was achieved at temperature as low as 1500 degrees C. Phase diagram calculation indicates that seamless joining was achieved by the formation of liquid phase at the interface between Dy3Si2C2 and SiC, which was squeezed out under pressure and continuously consumed by the joining interlayer. This work implies the great potential of the family of ternary rare-earth metal carbide Re3Si2C2 (Re = Y, La-Nd) as the sacrificial interlayer for high-quality SiC joining.
KeywordJoining Silicon carbide Ternary carbide Molten salt
DOI10.1016/j.jeurceramsoc.2019.09.002
Language英语
WOS Research AreaMaterials Science
PublisherELSEVIER SCI LTD
Citation statistics
Document Type期刊论文
Identifierhttp://ir.sic.ac.cn/handle/331005/26720
Collection中国科学院上海硅酸盐研究所
Recommended Citation
GB/T 7714
Wan, Peng,Li, Mian,Xu, Kai,et al. Seamless joining of silicon carbide ceramics through an sacrificial interlayer Of Dy3Si2C2[J]. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY,2019,39(16):5457.
APA Wan, Peng.,Li, Mian.,Xu, Kai.,Wu, Haibo.,Chang, Keke.,...&Huang, Qing.(2019).Seamless joining of silicon carbide ceramics through an sacrificial interlayer Of Dy3Si2C2.JOURNAL OF THE EUROPEAN CERAMIC SOCIETY,39(16),5457.
MLA Wan, Peng,et al."Seamless joining of silicon carbide ceramics through an sacrificial interlayer Of Dy3Si2C2".JOURNAL OF THE EUROPEAN CERAMIC SOCIETY 39.16(2019):5457.
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