Niobium pentoxide: a promising surface-enhanced Raman scattering active semiconductor substrate
Shan, Yufeng1; Zheng, Zhihui1; Liu, Jianjun1; Yang, Yong1; Li, Zhiyuan2; Huang, Zhengren1; Jiang, Dongliang
AbstractSurface-enhanced Raman scattering technique, as a powerful tool to identify the molecular species, has been severely restricted to the noble metals. The surface-enhanced Raman scattering substrates based on semiconductors would overcome the shortcomings of metal substrates and promote development of surface-enhanced Raman scattering technique in surface science, spectroscopy, and biomedicine studies. However, the detection sensitivity and enhancement effects of semiconductor substrates are suffering from their weak activities. In this work, a semiconductor based on Nb2O5 is reported as a new candidate for highly sensitive surface-enhanced Raman scattering detection of dye molecules. The largest enhancement factor value greater than 107 was observed with the laser excitation at 633 and 780 nm for methylene blue detection. As far as literature review shows, this is in the rank of the highest sensitivity among semiconductor materials; even comparable to the metal nanostructure substrates with "hot spots". The impressive surface-enhanced Raman scattering activities can be attributed to the chemical enhancement dominated by the photoinduced charge transfer, as well as the electromagnetic enhancement, which have been supported by the density-functional-theory and finite element method calculation results. The chemisorption of dye on Nb2O5 creates a new highest occupied molecular orbital and lowest unoccupied molecular orbital contributed by both fragments in the molecule-Nb2O5 system, which makes the charge transfer more feasible with longer excitation wavelength. In addition, the electromagnetic enhancement mechanism also accounts for two orders of magnitude enhancement in the overall enhancement factor value. This work has revealed Nb2O5 nanoparticles as a new semiconductor surface-enhanced Raman scattering substrate that is able to replace noble metals and shows great potentials applied in the fields of biology related.
WOS IDWOS:000426827900001
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Document Type期刊论文
Affiliation1.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, 1295 Dingxi Rd, Shanghai 200050, Peoples R China
2.Chinese Acad Sci, Grad Sch, Beijing, Peoples R China
3.Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
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Shan, Yufeng,Zheng, Zhihui,Liu, Jianjun,et al. Niobium pentoxide: a promising surface-enhanced Raman scattering active semiconductor substrate[J]. NPJ COMPUTATIONAL MATERIALS,2017,3.
APA Shan, Yufeng.,Zheng, Zhihui.,Liu, Jianjun.,Yang, Yong.,Li, Zhiyuan.,...&Jiang, Dongliang.(2017).Niobium pentoxide: a promising surface-enhanced Raman scattering active semiconductor substrate.NPJ COMPUTATIONAL MATERIALS,3.
MLA Shan, Yufeng,et al."Niobium pentoxide: a promising surface-enhanced Raman scattering active semiconductor substrate".NPJ COMPUTATIONAL MATERIALS 3(2017).
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