KMS Shanghai Institute of Ceramics，Chinese Academy of Sciences
| Photoemission study of the electronic structure of valence band convergent SnSe | |
| Wang, C. W.; Xia, Y. Y. Y.; Tian, Z.; Jiang, J.; Li, B. H.; Cui, S. T.; Yang, H. F.; Liang, A. J.; Zhan, X. Y.; Hong, G. H.; Liu, S.; Chen, C.; Wang, M. X.; Yang, L. X.; Liu, Z.; Mi, Q. X.; Li, G.; Xue, J. M.; Liu, Z. K.; Chen, Y. L. | |
| 2017 | |
| Source Publication | PHYSICAL REVIEW B
 |
| ISSN | 2469-9950 |
| Volume | 96Issue:16 |
| Abstract | IV-VI semiconductor SnSe has been known as the material with record high thermoelectric performance. The multiple close-to-degenerate (or "convergent") valence bands in the electronic band structure has been one of the key factors contributing to the high power factor and thus figure of merit in the SnSe single crystal. To date, there have been primarily theoretical calculations of this particular electronic band structure. In this paper, however, using angle-resolved photoemission spectroscopy, we perform a systematic investigation of the electronic structure of SnSe. We directly observe three predicted hole bands with small energy differences between their band tops and relatively small in-plane effective masses, in good agreement with the ab initio calculations and critical for the enhancement of the Seebeck coefficient while keeping high electrical conductivity. Our results reveal the complete band structure of SnSe and help to provide a deeper understanding of the electronic origin of the excellent thermoelectric performances in SnSe. |
| DOI | 10.1103/PhysRevB.96.165118 |
| WOS ID | WOS:000412700200002 |
| EI Accession Number | 2469-9969 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.sic.ac.cn/handle/331005/26639 |
| Collection | 中国科学院上海硅酸盐研究所 |
| Affiliation | 1.[Wang, C. W. 2.Zhan, X. Y. 3.Liu, Z.] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Ctr Excellence Superconducting Elect, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 4.[Wang, C. W. 5.Xia, Y. Y. Y. 6.Tian, Z. 7.Jiang, J. 8.Li, B. H. 9.Cui, S. T. 10.Yang, H. F. 11.Liang, A. J. 12.Hong, G. H. 13.Liu, S. 14.Wang, M. X. 15.Liu, Z. 16.Mi, Q. X. 17.Li, G. 18.Xue, J. M. 19.Liu, Z. K. 20.Chen, Y. L.] ShanghaiTech Univ, Sch Phys Sci & Technol, CAS Shanghai Sci Res Ctr, Shanghai 200031, Peoples R China 21.[Wang, C. W. 22.Xia, Y. Y. Y. 23.Tian, Z. 24.Zhan, X. Y. 25.Hong, G. H.] Univ Chinese Acad Sci, Beijing 100049, Peoples R China 26.[Xia, Y. Y. Y.] Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China 27.[Tian, Z. 28.Hong, G. H.] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China 29.[Jiang, J.] Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA 30.[Jiang, J.] POSTECH, Pohang Accelerator Lab, Pohang 790784, South Korea 31.[Liu, S.] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China 32.[Chen, C. 33.Chen, Y. L.] Univ Oxford, Dept Phys, Oxford OX1 3PU, England 34.[Yang, L. X. 35.Chen, Y. L.] Collaborat Innovat Ctr Quantum Matter, Beijing, Peoples R China 36.[Yang, L. X.] Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China 37.[Yang, L. X.] Tsinghua Univ, Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China |
| Recommended Citation GB/T 7714 | Wang, C. W.,Xia, Y. Y. Y.,Tian, Z.,et al. Photoemission study of the electronic structure of valence band convergent SnSe[J]. PHYSICAL REVIEW B,2017,96(16). |
| APA | Wang, C. W..,Xia, Y. Y. Y..,Tian, Z..,Jiang, J..,Li, B. H..,...&Chen, Y. L..(2017).Photoemission study of the electronic structure of valence band convergent SnSe.PHYSICAL REVIEW B,96(16). |
| MLA | Wang, C. W.,et al."Photoemission study of the electronic structure of valence band convergent SnSe".PHYSICAL REVIEW B 96.16(2017). |
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