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Fabrication of Semiconductor ZnO Nanostructures for Versatile SERS Application
Yang, Lili1; Yang, Yong; Ma, Yunfeng1; Li, Shuai1; Wei, Yuquan1; Huang, Zhengren; Nguyen Viet Long2
2017
Source PublicationNANOMATERIALS
ISSN2079-4991
Volume7Issue:11
AbstractSince the initial discovery of surface-enhanced Raman scattering (SERS) in the 1970s, it has exhibited a huge potential application in many fields due to its outstanding advantages. Since the ultra-sensitive noble metallic nanostructures have increasingly exposed themselves as having some problems during application, semiconductors have been gradually exploited as one of the critical SERS substrate materials due to their distinctive advantages when compared with noble metals. ZnO is one of the most representative metallic oxide semiconductors with an abundant reserve, various and cost-effective fabrication techniques, as well as special physical and chemical properties. Thanks to the varied morphologies, size-dependent exciton, good chemical stability, a tunable band gap, carrier concentration, and stoichiometry, ZnO nanostructures have the potential to be exploited as SERS substrates. Moreover, other distinctive properties possessed by ZnO such as biocompatibility, photocatcalysis and self-cleaning, and gas- and chemo-sensitivity can be synergistically integrated and exerted with SERS activity to realize the multifunctional potential of ZnO substrates. In this review, we discuss the inevitable development trend of exploiting the potential semiconductor ZnO as a SERS substrate. After clarifying the root cause of the great disparity between the enhancement factor (EF) of noble metals and that of ZnO nanostructures, two specific methods are put forward to improve the SERS activity of ZnO, namely: elemental doping and combination of ZnO with noble metals. Then, we introduce a distinctive advantage of ZnO as SERS substrate and illustrate the necessity of reporting a meaningful average EF. We also summarize some fabrication methods for ZnO nanostructures with varied dimensions (0-3 dimensions). Finally, we present an overview of ZnO nanostructures for the versatile SERS application.
DOI10.3390/nano7110398
WOS IDWOS:000416783800053
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Cited Times:10[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sic.ac.cn/handle/331005/26634
Collection中国科学院上海硅酸盐研究所
Affiliation1.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, 1295 Dingxi Rd, Shanghai 200050, Peoples R China
2.Chinese Acad Sci, Grad Univ, 19 A Yuquan Rd, Beijing 100049, Peoples R China
3.Ton Duc Thang Univ, Ceram & Biomat Res Grp, Ho Chi Minh City 800010, Vietnam
Recommended Citation
GB/T 7714
Yang, Lili,Yang, Yong,Ma, Yunfeng,et al. Fabrication of Semiconductor ZnO Nanostructures for Versatile SERS Application[J]. NANOMATERIALS,2017,7(11).
APA Yang, Lili.,Yang, Yong.,Ma, Yunfeng.,Li, Shuai.,Wei, Yuquan.,...&Nguyen Viet Long.(2017).Fabrication of Semiconductor ZnO Nanostructures for Versatile SERS Application.NANOMATERIALS,7(11).
MLA Yang, Lili,et al."Fabrication of Semiconductor ZnO Nanostructures for Versatile SERS Application".NANOMATERIALS 7.11(2017).
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