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Kinetics of Domain Switching by Mechanical and Electrical Stimulation in Relaxor-Based Ferroelectrics
Chen, Zibin; Hong, Liang; Wang, Feifei2; An, Xianghai; Wang, Xiaolin3; Ringer, Simon4; Chen, Long-Qing; Luo, Haosu5; Liao, Xiaozhou
2017
发表期刊PHYSICAL REVIEW APPLIED
ISSN2331-7019
卷号8期号:6
摘要Ferroelectric materials have been extensively explored for applications in high-density nonvolatile memory devices because of their ferroelectric-ferroelastic domain-switching behavior under electric loading or mechanical stress. However, the existence of ferroelectric and ferroelastic backswitching would cause significant data loss, which affects the reliability of data storage. Here, we apply in situ transmission electron microscopy and phase-field modeling to explore the unique ferroelastic domain-switching kinetics and the origin of this in relaxor-based Pb(Mg1/3Nb2/3)O-3-33%PbTiO3 single-crystal pillars under electrical and mechanical stimulations. Results showed that the electric-mechanical hysteresis loop shifted for relaxor-based single-crystal pillars because of the low energy levels of domains in the material and the constraint on the pillars, resulting in various mechanically reversible and irreversible domain-switching states. The phenomenon can potentially be used for advanced bit writing and reading in nonvolatile memories, which effectively overcomes the backswitching problem and broadens the types of ferroelectric materials for nonvolatile memory applications.
DOI10.1103/PhysRevApplied.8.064005
WOS记录号WOS:000417133600002
引用统计
文献类型期刊论文
条目标识符http://ir.sic.ac.cn/handle/331005/26620
专题中国科学院上海硅酸盐研究所
作者单位1.Univ Sydney, Sch Aerosp Mech & Mechatron Engn, Sydney, NSW 2006, Australia
2.Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
3.Shanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China
4.Univ Wollongong, Fac Engn, Australian Inst Innovat Mat, Inst Superconducting & Elect Mat, Wollongong, NSW 2522, Australia
5.Univ Sydney, Australian Inst Nanoscale Sci & Technol, Sydney, NSW 2006, Australia
6.Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China
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Chen, Zibin,Hong, Liang,Wang, Feifei,et al. Kinetics of Domain Switching by Mechanical and Electrical Stimulation in Relaxor-Based Ferroelectrics[J]. PHYSICAL REVIEW APPLIED,2017,8(6).
APA Chen, Zibin.,Hong, Liang.,Wang, Feifei.,An, Xianghai.,Wang, Xiaolin.,...&Liao, Xiaozhou.(2017).Kinetics of Domain Switching by Mechanical and Electrical Stimulation in Relaxor-Based Ferroelectrics.PHYSICAL REVIEW APPLIED,8(6).
MLA Chen, Zibin,et al."Kinetics of Domain Switching by Mechanical and Electrical Stimulation in Relaxor-Based Ferroelectrics".PHYSICAL REVIEW APPLIED 8.6(2017).
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