KMS Shanghai Institute of Ceramics,Chinese Academy of Sciences
Effects of artificial defect on the material residual strength of SiC ceramics after thermal-shock | |
Yang, Xiao; Liu, Xuejian; Wang, Lujie; Zhang, Hui; Yao, Xiumin; Huang, Zhengren | |
2017 | |
Source Publication | Materials Science and Engineering A
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ISSN | 09215093 |
Volume | 707Pages:159-163 |
Abstract | 24 |
DOI | 10.1016/j.msea.2017.09.043 |
EI Accession Number | 20173804182578 |
EI Keywords | Bending strength - Ceramic materials - Cracks - Microstructure - Silicon carbide - Stress relaxation - Surface defects - Thermal shock |
EI Classification Number | Compendex |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.sic.ac.cn/handle/331005/26141 |
Collection | 中国科学院上海硅酸盐研究所 |
Affiliation | State Key Laboratory, Shanghai Institute of Ceramics Chinese Academy of Sciences, Shanghai, China |
Recommended Citation GB/T 7714 | Yang, Xiao,Liu, Xuejian,Wang, Lujie,et al. Effects of artificial defect on the material residual strength of SiC ceramics after thermal-shock[J]. Materials Science and Engineering A,2017,707:159-163. |
APA | Yang, Xiao,Liu, Xuejian,Wang, Lujie,Zhang, Hui,Yao, Xiumin,&Huang, Zhengren.(2017).Effects of artificial defect on the material residual strength of SiC ceramics after thermal-shock.Materials Science and Engineering A,707,159-163. |
MLA | Yang, Xiao,et al."Effects of artificial defect on the material residual strength of SiC ceramics after thermal-shock".Materials Science and Engineering A 707(2017):159-163. |
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