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Growth and Property of In:Ga2O3Oxide Semiconductor Single Crystal
Tang, Hui-Li1,2; Wu, Qing-Hui2,3; Luo, Ping1,2; Wang, Qing-Guo1,2; Xu, Jun1,2
2017
Source PublicationWuji Cailiao Xuebao/Journal of Inorganic Materials
ISSN1000324X
Volume32Issue:6Pages:621-624
Abstract14
DOI10.15541/jim20160446
EI Accession Number20173704153863
EI KeywordsCarrier concentration - Electric conductivity - Gallium compounds - Indium compounds - Ions - Light absorption - Oxide semiconductors - Semiconductor doping - Semiconductor growth - Thermal conductivity - Wide band gap semiconductors
EI Classification NumberCompendex
Citation statistics
Document Type期刊论文
Identifierhttp://ir.sic.ac.cn/handle/331005/26123
Collection中国科学院上海硅酸盐研究所
Affiliation1.School of Physics Science and Engineering, Tongji University, Shanghai; 200092, China;
2.Shanghai Engineering Research Center for Sapphire Crystals, Shanghai; 201800, China;
3.Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai; 201800, China
Recommended Citation
GB/T 7714
Tang, Hui-Li,Wu, Qing-Hui,Luo, Ping,et al. Growth and Property of In:Ga2O3Oxide Semiconductor Single Crystal[J]. Wuji Cailiao Xuebao/Journal of Inorganic Materials,2017,32(6):621-624.
APA Tang, Hui-Li,Wu, Qing-Hui,Luo, Ping,Wang, Qing-Guo,&Xu, Jun.(2017).Growth and Property of In:Ga2O3Oxide Semiconductor Single Crystal.Wuji Cailiao Xuebao/Journal of Inorganic Materials,32(6),621-624.
MLA Tang, Hui-Li,et al."Growth and Property of In:Ga2O3Oxide Semiconductor Single Crystal".Wuji Cailiao Xuebao/Journal of Inorganic Materials 32.6(2017):621-624.
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