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High-peak-power Nd:ScYSiO5laser at 1355 nm pumped by a pulsed laser diode
Li, Lei1,2; Cao, Maoyong1,2; Liu, Shande2; Peng, Yandong2; Zheng, Lihe3; Xu, Jun4
2017
Source PublicationOptik
ISSN00304026
Volume140Pages:248-252
Abstract14
DOI10.1016/j.ijleo.2017.04.044
EI Accession Number20171803621191
EI KeywordsDiodes - Optical pumping - Q switched lasers - Saturable absorbers - Yttrium aluminum garnet
EI Classification NumberCompendex
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sic.ac.cn/handle/331005/26112
Collection中国科学院上海硅酸盐研究所
Affiliation1.College of Electrical, Engineering and Automation, Shandong University of Science and Technology, Qingdao; 266590, China;
2.College of Electronics, Communication and Physics, Shandong University of Science and Technology, Qingdao; 266590, China;
3.Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai; 200050, China;
4.School of Physics Science and Engineering, Institute for Advanced Study, Tongji University, Shanghai; 200092, China
Recommended Citation
GB/T 7714
Li, Lei,Cao, Maoyong,Liu, Shande,et al. High-peak-power Nd:ScYSiO5laser at 1355 nm pumped by a pulsed laser diode[J]. Optik,2017,140:248-252.
APA Li, Lei,Cao, Maoyong,Liu, Shande,Peng, Yandong,Zheng, Lihe,&Xu, Jun.(2017).High-peak-power Nd:ScYSiO5laser at 1355 nm pumped by a pulsed laser diode.Optik,140,248-252.
MLA Li, Lei,et al."High-peak-power Nd:ScYSiO5laser at 1355 nm pumped by a pulsed laser diode".Optik 140(2017):248-252.
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