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Effect of Sn substitution on the energy storage properties of high (001)-oriented PbZrO3thin films
Guo, Xin1,2,3; Ge, Jun1,2,3; Ponchel, Freddy2; Rémiens, Denis2; Chen, Ying1; Dong, Xianlin1; Wang, Genshui1
2017
Source PublicationThin Solid Films
ISSN00406090
Volume632Pages:93-96
Abstract22
DOI10.1016/j.tsf.2017.04.045
EI Accession Number20171903648715
EI KeywordsElectric fields - Electric losses - Energy efficiency - Energy storage - Ferroelectric films - Lead compounds - Magnetron sputtering - Silica - Storage (materials) - Tin - Tin compounds - Zirconium compounds
EI Classification NumberCompendex
Citation statistics
Cited Times:6[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sic.ac.cn/handle/331005/26090
Collection中国科学院上海硅酸盐研究所
Affiliation1.Key Laboratory of Inorganic Function Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Rd., Shanghai; 200050, China;
2.Institute of Electronics, Microelectronics and Nanotechnology (IEMN)–DOAE, UMR CNRS 8520, Université´ de Valenciennes et du Hainaut Cambrésis, Cedex 9, Valenciennes; 59313, France;
3.University of Chinese Academy of Sciences, 19 A Yuquan Rd., Shijingshan District, Beijing; 100049, China
Recommended Citation
GB/T 7714
Guo, Xin,Ge, Jun,Ponchel, Freddy,et al. Effect of Sn substitution on the energy storage properties of high (001)-oriented PbZrO3thin films[J]. Thin Solid Films,2017,632:93-96.
APA Guo, Xin.,Ge, Jun.,Ponchel, Freddy.,Rémiens, Denis.,Chen, Ying.,...&Wang, Genshui.(2017).Effect of Sn substitution on the energy storage properties of high (001)-oriented PbZrO3thin films.Thin Solid Films,632,93-96.
MLA Guo, Xin,et al."Effect of Sn substitution on the energy storage properties of high (001)-oriented PbZrO3thin films".Thin Solid Films 632(2017):93-96.
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