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APS bias voltage on properties of HfO2laser films deposited by reactive plasma ion assisted electron evaporation
Fu, Chao-Li1,2; Yang, Yong1; Ma, Yun-Feng1; Wei, Yu-Quan1; Jiao, Zheng2; Huang, Zheng-Ren1
2017
Source PublicationWuji Cailiao Xuebao/Journal of Inorganic Materials
ISSN1000324X
Volume32Issue:1Pages:69-74
AbstractThe anti laser HfO2films were deposited by reactive plasma ion assisted electron beam evaporation in low O2-pressure with different Advanced Plasma Source (APS) bias voltages. Properties of HfO2film sincluding chemical composition, refractive index and residual stress were investigated. Microstructure of HfO2films was analyzed by scanning electron microscope (SEM) and X-ray diffraction (XRD). Laser induced damage threshold (LIDT) and damage mechanisms of HfO2films were finally evaluated and discussed. Properties of HfO2films display sensitive to APS bias voltage. As the APS bias voltage decreases, the O/Hf ratio in the film increases, accompanied by decreasing refractive index and residual stress. The damage morphology of HfO2films appears in the form of agglomerations of craters with a few hundreds of nanometers, left by evaporation of grains ascribed to strong absorption and accumulation of laser energy at grain-boundaries. HfO2films with higher LIDT can be grown under lower bias voltage which benefits the achievement of uniform microstructure and the crystallization orientation from (111) plane to (002) plane with low grain boundary energy and lattice defects. © 2017, Science Press. All right reserved.
DOI10.15541/jim20160170
EI Accession Number20170603325794
EI KeywordsLaser damage
EI Classification Number713 Electronic Circuits - 741.1 Light/Optics - 744.8 Laser Beam Interactions - 802.3 Chemical Operations - 804 Chemical Products Generally - 951 Materials Science
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Document Type期刊论文
Identifierhttp://ir.sic.ac.cn/handle/331005/25947
Collection中国科学院上海硅酸盐研究所
Affiliation1.Structural Ceramic Engineering Research Center, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai; 201800, China;
2.College of Environmental Chemistry and Engineering, Shanghai University, Shanghai; 200444, China
Recommended Citation
GB/T 7714
Fu, Chao-Li,Yang, Yong,Ma, Yun-Feng,et al. APS bias voltage on properties of HfO2laser films deposited by reactive plasma ion assisted electron evaporation[J]. Wuji Cailiao Xuebao/Journal of Inorganic Materials,2017,32(1):69-74.
APA Fu, Chao-Li,Yang, Yong,Ma, Yun-Feng,Wei, Yu-Quan,Jiao, Zheng,&Huang, Zheng-Ren.(2017).APS bias voltage on properties of HfO2laser films deposited by reactive plasma ion assisted electron evaporation.Wuji Cailiao Xuebao/Journal of Inorganic Materials,32(1),69-74.
MLA Fu, Chao-Li,et al."APS bias voltage on properties of HfO2laser films deposited by reactive plasma ion assisted electron evaporation".Wuji Cailiao Xuebao/Journal of Inorganic Materials 32.1(2017):69-74.
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