Influence of SiO2on electrical properties of the highly nonlinear ZnO-Bi2O3-MnO2varistors

doi:10.1016/j.jeurceramsoc.2017.05.014

SIC OpenIR

	Influence of SiO2on electrical properties of the highly nonlinear ZnO-Bi2O3-MnO2varistors
	Bai, Hairui 1; Li, Miaomiao 1; Xu, Zhijun 2; Chu, Ruiqing 2; Hao, Jigong 1; Li, Huaiyong 1; Chen, Chong 1; Li, Guorong 3
	2017
Source Publication	Journal of the European Ceramic Society
ISSN	09552219
Volume	37 Issue:13 Pages:3965-3971
Abstract	The ZnO-Bi2O3-MnO2-xSiO2(ZBMS) varistor was prepared at a low sintering temperature of 880 °C via the conventional solid state method. The phase transformation, microstructure, and electrical properties of the ZBMS varistor were studied as a function of doping amount of SiO2. It is showed that the growth of ZnO grain is restrained by the introducing of SiO2; and the grain size decreases from 4.68 μm to 2.98 μm. The breakdown voltage E1mAexhibits a simultaneous variation from 608.11 V/mm to 1232.88 V/mm. It is also revealed that SiO2has a significant effect on the Schottky barrier structure. As a result, the highest barrier height φbof 5.34 eV is attained at a composition of x = 2.0 wt%, which contributes to the highest nonlinear coefficient α of 73.68. Moreover, all the samples show low leakage current of IL 0.1 μA. © 2017 Elsevier Ltd
DOI	10.1016/j.jeurceramsoc.2017.05.014
EI Accession Number	20172103689979
EI Keywords	Bismuth compounds
EI Classification Number	701.1 Electricity: Basic Concepts and Phenomena - 714.2 Semiconductor Devices and Integrated Circuits - 802.3 Chemical Operations - 804 Chemical Products Generally - 804.2 Inorganic Compounds - 933.1.2 Crystal Growth
Citation statistics	Cited Times:18[WOS] [WOS Record] [Related Records in WOS]
Document Type	期刊论文
Identifier	http://ir.sic.ac.cn/handle/331005/25892
Collection	中国科学院上海硅酸盐研究所
Affiliation	1.College of Materials Science and Engineering, Liaocheng University, Liaocheng; 252059, China; 2.School of Environmental and Materials Engineering, Yantai University, 32 Qingquan Road, Yantai; 264005, China; 3.The State Key Lab. of High Performance Ceramics and Superfinemicrostructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai; 200050, China
Recommended Citation GB/T 7714	Bai, Hairui,Li, Miaomiao,Xu, Zhijun,et al. Influence of SiO2on electrical properties of the highly nonlinear ZnO-Bi2O3-MnO2varistors[J]. Journal of the European Ceramic Society,2017,37(13):3965-3971.
APA	Bai, Hairui.,Li, Miaomiao.,Xu, Zhijun.,Chu, Ruiqing.,Hao, Jigong.,...&Li, Guorong.(2017).Influence of SiO2on electrical properties of the highly nonlinear ZnO-Bi2O3-MnO2varistors.Journal of the European Ceramic Society,37(13),3965-3971.
MLA	Bai, Hairui,et al."Influence of SiO2on electrical properties of the highly nonlinear ZnO-Bi2O3-MnO2varistors".Journal of the European Ceramic Society 37.13(2017):3965-3971.

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