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Modeling for high-temperature dielectric behavior of multilayer Cf/Si3N4composites in X-band
Luo, Heng1,2; Tan, Yongqiang1; Li, Yang2,3; Xiao, Peng2; Deng, Lianwen2; Zeng, Sifan1; Zhang, Guojun4,5; Zhang, Haibin1; Zhou, Xiaosong1; Peng, Shuming1
2017
Source PublicationJournal of the European Ceramic Society
ISSN09552219
Volume37Issue:5Pages:1961-1968
AbstractThe high-temperature dielectric behavior of multilayer Cf/Si3N4composites fabricated by gelcasting and pressuureless sintering was intensively investigated at temperatures coverage up to 800 °C in X-band (8.2–12.4 GHz). Experimental results have shown the permittivity of Si3N4matrix exhibits excellent thermo-stability with temperature coefficient lower than 10−3 °C−1. Besides, both the real and imaginary parts of permittivity of multilayer Cf/Si3N4composites exhibit positive temperature coefficient characteristic which attributed to the enhancement of space charge polarization. Furthermore, temperature-dependent permittivity of Cf/Si3N4composites is demonstrated to be well distributed on circular arcs with centers actually keep around the real (Ε') axis in Cole-Cole plane. Finally, the relaxation time for multilayer Cf/Si3N4composites gradually increases from 216.1 ps to 250.2 ps when heated from room temperature to 800 °C, and is almost twice as much as a single cycle for electromagnetic wave in X-band which leads to continuous decrease in permittivity with frequency. © 2016 Elsevier Ltd
DOI10.1016/j.jeurceramsoc.2016.12.028
EI Accession Number20170203225050
EI KeywordsNitrogen compounds
EI Classification Number641.1 Thermodynamics - 711 Electromagnetic Waves - 931 Classical Physics ; Quantum Theory ; Relativity
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Cited Times:6[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sic.ac.cn/handle/331005/25810
Collection中国科学院上海硅酸盐研究所
Affiliation1.Innovation Research Team for Advanced Ceramics, Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang; 621900, China;
2.State Key Laboratory for Powder Metallurgy, Central South University, Changsha; 410083, China;
3.Ceramic Materials Engineering, University of Bayreuth, Bayreuth; 95447, Germany;
4.State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, Shanghai; 201620, China;
5.Research Institute of Functional Materials, Donghua University, Shanghai; 201620, China
Recommended Citation
GB/T 7714
Luo, Heng,Tan, Yongqiang,Li, Yang,et al. Modeling for high-temperature dielectric behavior of multilayer Cf/Si3N4composites in X-band[J]. Journal of the European Ceramic Society,2017,37(5):1961-1968.
APA Luo, Heng.,Tan, Yongqiang.,Li, Yang.,Xiao, Peng.,Deng, Lianwen.,...&Peng, Shuming.(2017).Modeling for high-temperature dielectric behavior of multilayer Cf/Si3N4composites in X-band.Journal of the European Ceramic Society,37(5),1961-1968.
MLA Luo, Heng,et al."Modeling for high-temperature dielectric behavior of multilayer Cf/Si3N4composites in X-band".Journal of the European Ceramic Society 37.5(2017):1961-1968.
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