Cu8GeSe6-based thermoelectric materials with an argyrodite structure
Jiang, Binbin1,2; Qiu, Pengfei1; Eikeland, Espen3; Chen, Hongyi1,2; Song, Qingfeng1,2; Ren, Dudi1; Zhang, Tiansong1; Yang, Jiong4; Iversen, Bo Brummerstedt3; Shi, Xun1; Chen, Lidong1,5
Source PublicationJournal of Materials Chemistry C
AbstractRecently, liquid-like superionic thermoelectric materials have attracted great attention due to their extremely low lattice thermal conductivity and high thermoelectric figure of merit (ZT). Argyrodite-type compounds are typical superionic semiconductors with two independent structural units that can be used to separately tune electrical and thermal transport properties. In this work, we report that Cu8GeSe6with an argyrodite structure is a new class of thermoelectric materials with extremely low lattice thermal conductivity. The presence of two independent structural units in Cu8GeSe6provides the possibility of greatly improving its electrical transport properties while maintaining ultralow lattice thermal conductivity. By alloying Ag and Te in Cu8GeSe6, the ZT values are significantly improved to above unity at 800 K in Cu7.6Ag0.4GeSe5.1Te0.9, comparable with the best superionic liquid-like thermoelectric materials. The ultralow thermal conductivity is mainly attributed to the weak chemical bonding between Cu atoms and the rigid [GeSe6] sublattice. © The Royal Society of Chemistry.
EI Accession Number20170503311434
EI KeywordsThermal conductivity
EI Classification Number615.4 Thermoelectric Energy - 641.1 Thermodynamics - 701.1 Electricity: Basic Concepts and Phenomena - 801.4 Physical Chemistry - 933.1.1 Crystal Lattice
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Cited Times:25[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Affiliation1.State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai; 200050, China;
2.University of Chinese Academy of Sciences, Beijing; 100049, China;
3.Center for Materials Crystallography, Department of Chemistry and iNANO, Aarhus University, Aarhus C; DK-8000, Denmark;
4.Materials Genome Institute, Shanghai University, Shanghai; 200444, China;
5.Shanghai Institute of Materials Genome, Shanghai, China
Recommended Citation
GB/T 7714
Jiang, Binbin,Qiu, Pengfei,Eikeland, Espen,et al. Cu8GeSe6-based thermoelectric materials with an argyrodite structure[J]. Journal of Materials Chemistry C,2017,5(4):943-952.
APA Jiang, Binbin.,Qiu, Pengfei.,Eikeland, Espen.,Chen, Hongyi.,Song, Qingfeng.,...&Chen, Lidong.(2017).Cu8GeSe6-based thermoelectric materials with an argyrodite structure.Journal of Materials Chemistry C,5(4),943-952.
MLA Jiang, Binbin,et al."Cu8GeSe6-based thermoelectric materials with an argyrodite structure".Journal of Materials Chemistry C 5.4(2017):943-952.
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