Silicon-doped hafnium oxide anti-ferroelectric thin films for energy storage
Ali, Faizan1; Liu, Xiaohua1; Zhou, Dayu1; Yang, Xirui1; Xu, Jin2; Schenk, Tony3; Müller, Johannes4; Schroeder, Uwe3; Cao, Fei5; Dong, Xianlin5
Source PublicationJournal of Applied Physics
AbstractMotivated by the development of ultracompact electronic devices as miniaturized energy autonomous systems, great research efforts have been expended in recent years to develop various types of nano-structural energy storage components. The electrostatic capacitors characterized by high power density are competitive; however, their implementation in practical devices is limited by the low intrinsic energy storage density (ESD) of linear dielectrics like Al2O3. In this work, a detailed experimental investigation of energy storage properties is presented for 10 nm thick silicon-doped hafnium oxide anti-ferroelectric thin films. Owing to high field induced polarization and slim double hysteresis, an extremely large ESD value of 61.2 J/cm3is achieved at 4.5 MV/cm with a high efficiency of ∼65%. In addition, the ESD and the efficiency exhibit robust thermal stability in 210-400 K temperature range and an excellent endurance up to 109times of charge/discharge cycling at a very high electric field of 4.0 MV/cm. The superior energy storage performance together with mature technology of integration into 3-D arrays suggests great promise for this recently discovered anti-ferroelectric material to replace the currently adopted Al2O3in fabrication of nano-structural supercapacitors. © 2017 Author(s).
EI Accession Number20174304287660
EI KeywordsHafnium oxides
EI Classification Number525.7 Energy Storage - 694.4 Storage - 701.1 Electricity: Basic Concepts and Phenomena - 708.1 Dielectric Materials - 804 Chemical Products Generally - 804.2 Inorganic Compounds
Citation statistics
Cited Times:11[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Affiliation1.Key Laboratory of Materials Modification by Laser Ion, and Electron Beams, Ministry of Education, School of Materials Science and Engineering, Dalian University of Technology, Dalian; 116024, China;
2.Department of Electronic Engineering, Dalian Neusoft University of Information, Dalian; 116023, China;
3.NaMLab GGmbH/TU Dresden, Noethnitzer Str. 64, Dresden; D-01187, Germany;
4.Fraunhofer IPMS, Koenigsbruecker Str. 178, Dresden; 01099, Germany;
5.Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai; 200050, China
Recommended Citation
GB/T 7714
Ali, Faizan,Liu, Xiaohua,Zhou, Dayu,et al. Silicon-doped hafnium oxide anti-ferroelectric thin films for energy storage[J]. Journal of Applied Physics,2017,122(14).
APA Ali, Faizan.,Liu, Xiaohua.,Zhou, Dayu.,Yang, Xirui.,Xu, Jin.,...&Dong, Xianlin.(2017).Silicon-doped hafnium oxide anti-ferroelectric thin films for energy storage.Journal of Applied Physics,122(14).
MLA Ali, Faizan,et al."Silicon-doped hafnium oxide anti-ferroelectric thin films for energy storage".Journal of Applied Physics 122.14(2017).
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Ali, Faizan]'s Articles
[Liu, Xiaohua]'s Articles
[Zhou, Dayu]'s Articles
Baidu academic
Similar articles in Baidu academic
[Ali, Faizan]'s Articles
[Liu, Xiaohua]'s Articles
[Zhou, Dayu]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Ali, Faizan]'s Articles
[Liu, Xiaohua]'s Articles
[Zhou, Dayu]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.