SIC OpenIR
Silicon-doped hafnium oxide anti-ferroelectric thin films for energy storage
Ali, Faizan1; Liu, Xiaohua1; Zhou, Dayu1; Yang, Xirui1; Xu, Jin2; Schenk, Tony3; Müller, Johannes4; Schroeder, Uwe3; Cao, Fei5; Dong, Xianlin5
2017
发表期刊Journal of Applied Physics
ISSN00218979
卷号122期号:14
摘要Motivated by the development of ultracompact electronic devices as miniaturized energy autonomous systems, great research efforts have been expended in recent years to develop various types of nano-structural energy storage components. The electrostatic capacitors characterized by high power density are competitive; however, their implementation in practical devices is limited by the low intrinsic energy storage density (ESD) of linear dielectrics like Al2O3. In this work, a detailed experimental investigation of energy storage properties is presented for 10 nm thick silicon-doped hafnium oxide anti-ferroelectric thin films. Owing to high field induced polarization and slim double hysteresis, an extremely large ESD value of 61.2 J/cm3is achieved at 4.5 MV/cm with a high efficiency of ∼65%. In addition, the ESD and the efficiency exhibit robust thermal stability in 210-400 K temperature range and an excellent endurance up to 109times of charge/discharge cycling at a very high electric field of 4.0 MV/cm. The superior energy storage performance together with mature technology of integration into 3-D arrays suggests great promise for this recently discovered anti-ferroelectric material to replace the currently adopted Al2O3in fabrication of nano-structural supercapacitors. © 2017 Author(s).
DOI10.1063/1.4989908
EI入藏号20174304287660
EI主题词Hafnium oxides
EI分类号525.7 Energy Storage - 694.4 Storage - 701.1 Electricity: Basic Concepts and Phenomena - 708.1 Dielectric Materials - 804 Chemical Products Generally - 804.2 Inorganic Compounds
引用统计
文献类型期刊论文
条目标识符http://ir.sic.ac.cn/handle/331005/25787
专题中国科学院上海硅酸盐研究所
作者单位1.Key Laboratory of Materials Modification by Laser Ion, and Electron Beams, Ministry of Education, School of Materials Science and Engineering, Dalian University of Technology, Dalian; 116024, China;
2.Department of Electronic Engineering, Dalian Neusoft University of Information, Dalian; 116023, China;
3.NaMLab GGmbH/TU Dresden, Noethnitzer Str. 64, Dresden; D-01187, Germany;
4.Fraunhofer IPMS, Koenigsbruecker Str. 178, Dresden; 01099, Germany;
5.Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai; 200050, China
推荐引用方式
GB/T 7714
Ali, Faizan,Liu, Xiaohua,Zhou, Dayu,et al. Silicon-doped hafnium oxide anti-ferroelectric thin films for energy storage[J]. Journal of Applied Physics,2017,122(14).
APA Ali, Faizan.,Liu, Xiaohua.,Zhou, Dayu.,Yang, Xirui.,Xu, Jin.,...&Dong, Xianlin.(2017).Silicon-doped hafnium oxide anti-ferroelectric thin films for energy storage.Journal of Applied Physics,122(14).
MLA Ali, Faizan,et al."Silicon-doped hafnium oxide anti-ferroelectric thin films for energy storage".Journal of Applied Physics 122.14(2017).
条目包含的文件
条目无相关文件。
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Ali, Faizan]的文章
[Liu, Xiaohua]的文章
[Zhou, Dayu]的文章
百度学术
百度学术中相似的文章
[Ali, Faizan]的文章
[Liu, Xiaohua]的文章
[Zhou, Dayu]的文章
必应学术
必应学术中相似的文章
[Ali, Faizan]的文章
[Liu, Xiaohua]的文章
[Zhou, Dayu]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。