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High-performance BiFe0.95Mn0.05O3ferroelectric film epitaxially integrated on GaN substrate with LSMO/TiO2bi-layer buffer
Xu, Leilei1,2; Li, Xiaomin1; Zhu, Qiuxiang1; Xu, Xiaoke1,3; Qin, Meng1,2
2017
Source PublicationMaterials Letters
ISSN0167577X
Volume193Pages:240-243
AbstractThe highly (1 1 1)-oriented BiFe0.95Mn0.05O3(BFMO) films owning excellent ferroelectric performance have been epitaxially grown on (0 0 0 2) GaN substrates with La0.7Sr0.3MnO3(LSMO)/TiO2bi-layer buffer by pulsed laser deposition. By means of the LSMO/TiO2bi-layer buffer, the lattice mismatch between perovskite (1 1 1) BFMO and wurtzite (0 0 0 2) GaN was miraculously decreased from 12.4% to 1.4%. The remnant ferroelectric polarization and coercive field of the BFMO (1 1 1) film were determined to be 115 μC/cm2and 450 kV/cm, respectively. Compared with the BFMO film deposited on the bare GaN substrate, the remnant ferroelectric polarization was enhanced by 92%. The piezoresponse force microscopy (PFM) image further confirmed that the BFMO (1 1 1) film owned perfect ferroelectric switching properties. © 2017 Elsevier B.V.
DOI10.1016/j.matlet.2017.01.125
EI Accession Number20170703347403
EI KeywordsBismuth compounds
EI Classification Number482.2 Minerals - 701.1 Electricity: Basic Concepts and Phenomena - 708.1 Dielectric Materials - 744.9 Laser Applications - 801 Chemistry - 804.2 Inorganic Compounds - 933.1.1 Crystal Lattice - 933.1.2 Crystal Growth
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Document Type期刊论文
Identifierhttp://ir.sic.ac.cn/handle/331005/25755
Collection中国科学院上海硅酸盐研究所
Affiliation1.State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, No. 1295 Dingxi Road, Shanghai; 200050, China;
2.University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing; 100049, China;
3.School of Materials Science and Engineering, Shanghai Institute of Technology, No. 100 Haiquan Road, Shanghai; 201418, China
Recommended Citation
GB/T 7714
Xu, Leilei,Li, Xiaomin,Zhu, Qiuxiang,et al. High-performance BiFe0.95Mn0.05O3ferroelectric film epitaxially integrated on GaN substrate with LSMO/TiO2bi-layer buffer[J]. Materials Letters,2017,193:240-243.
APA Xu, Leilei,Li, Xiaomin,Zhu, Qiuxiang,Xu, Xiaoke,&Qin, Meng.(2017).High-performance BiFe0.95Mn0.05O3ferroelectric film epitaxially integrated on GaN substrate with LSMO/TiO2bi-layer buffer.Materials Letters,193,240-243.
MLA Xu, Leilei,et al."High-performance BiFe0.95Mn0.05O3ferroelectric film epitaxially integrated on GaN substrate with LSMO/TiO2bi-layer buffer".Materials Letters 193(2017):240-243.
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