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Luminescence of donor-acceptor-pair in fluorescent 4H-SiC doped with nitrogen, boron and aluminum
Zhuo, Shi-Yi; Liu, Xi; Gao, Pan; Yan, Cheng-Feng; Shi, Er-Wei
2017
Source PublicationWuji Cailiao Xuebao/Journal of Inorganic Materials
ISSN1000324X
Volume32Issue:1Pages:51-55
AbstractFluorescent 4H-SiC, co-doped with donor and acceptor impurities, can work as phosphor for visible light emission by recombination. Donor concentration and acceptor impurities are two important factors which influence luminescent properties of fluorescent 4H-SiC. In this study, 3 inch N-B-Al co-doped 4H-SiC crystals were prepared by physical vapor transport method. Crystalline type and N-B-Al concentration of the doped 4H-SiC were measured by Raman spectrum and secondary ion mass spectra. Influences of doping concentrations on the photoluminescence were studied by photoluminescence excitation and emission spectra, luminescence decay curves, and internal and external quantum efficiencies. It is found that p-type fluorescent 4H-SiC with low Al doping concentration shows intensive yellow-green fluorescence at room temperature. Heavily doped N and B and lightly doped Al in 4H-SiC produce enough electron hole pairs for the recombination. This sufficient recombination enhances internal quantum efficiency of fluorescent 4H-SiC. Furthermore, the recombination is also helpful to increase their photoluminescence intensity and average fluorescence lifetime. © 2017, Science Press. All right reserved.
DOI10.15541/jim20160268
EI Accession Number20170603325791
EI KeywordsSilicon carbide
EI Classification Number541.1 Aluminum - 549.3 Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals - 741.1 Light/Optics - 801 Chemistry - 804 Chemical Products Generally - 804.2 Inorganic Compounds - 913.1 Production Engineering - 931.4 Quantum Theory ; Quantum Mechanics - 933.1.1 Crystal Lattice
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Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sic.ac.cn/handle/331005/25663
Collection中国科学院上海硅酸盐研究所
AffiliationShanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai; 200050, China
Recommended Citation
GB/T 7714
Zhuo, Shi-Yi,Liu, Xi,Gao, Pan,et al. Luminescence of donor-acceptor-pair in fluorescent 4H-SiC doped with nitrogen, boron and aluminum[J]. Wuji Cailiao Xuebao/Journal of Inorganic Materials,2017,32(1):51-55.
APA Zhuo, Shi-Yi,Liu, Xi,Gao, Pan,Yan, Cheng-Feng,&Shi, Er-Wei.(2017).Luminescence of donor-acceptor-pair in fluorescent 4H-SiC doped with nitrogen, boron and aluminum.Wuji Cailiao Xuebao/Journal of Inorganic Materials,32(1),51-55.
MLA Zhuo, Shi-Yi,et al."Luminescence of donor-acceptor-pair in fluorescent 4H-SiC doped with nitrogen, boron and aluminum".Wuji Cailiao Xuebao/Journal of Inorganic Materials 32.1(2017):51-55.
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