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Effects of zirconium doping on the structural, dielectric, ferroelectric, piezoelectric, and magnetic properties of lead-free 0.67BiFe0.97Ga0.03O3–0.33BaTi1−xZrxO3ceramics
Qin, Meng1,2; Yan, Jian-Min1,3; Wang, Fei-Fei3; Liu, Yu-Kuai4; Zheng, Ren-Kui1
2017
Source PublicationJournal of Materials Science: Materials in Electronics
ISSN09574522
Volume28Issue:14Pages:10212-10217
AbstractHere we report the structural, dielectric, ferroelectric, piezoelectric, and magnetic properties of zirconium-doped 0.67BiFe0.97Ga0.03O3–0.33BaZrxTi1−xO3(BFG–BZT) lead-free ceramics. Structural investigations reveal that the doped Zr4+ions (up to x = 0.15) can be fully incorporated into the host lattice. Dielectric measurements demonstrate that with increasing Zr4+content, both the ferroelectric Curie temperature TCand the dielectric constant decrease monotonously, and that the dielectric constant exhibits relaxor behaviors upon Zr4+doping. At the same time, the remnant polarization Princreases and then decreases, with the maximum Pr∼ 26 µC/cm2for x = 0.025. One of the noteworthy results is that the remanent magnetic moment at room temperature increases up to 0.17 emu/g with increasing x from 0 to 0.15, which is attributed to enhanced lattice distortions due to Zr4+doping. The coexistence of strong ferroelectricity and ferromagnetism at room temperature implies that the BFG–BZT could be potential candidate materials for multiferroic device applications. © 2017, Springer Science+Business Media New York.
DOI10.1007/s10854-017-6787-8
EI Accession Number20171603583643
EI KeywordsFerroelectric ceramics
EI Classification Number549.3 Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals - 701.1 Electricity: Basic Concepts and Phenomena - 701.2 Magnetism: Basic Concepts and Phenomena - 712.1 Semiconducting Materials - 812.1 Ceramics
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Document Type期刊论文
Identifierhttp://ir.sic.ac.cn/handle/331005/25655
Collection中国科学院上海硅酸盐研究所
Affiliation1.State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai; 200050, China;
2.University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing; 100049, China;
3.Key Laboratory of Optoelectronic Materials and Devices, Department of Physics, Shanghai Normal University, Shanghai; 200234, China;
4.Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong
Recommended Citation
GB/T 7714
Qin, Meng,Yan, Jian-Min,Wang, Fei-Fei,等. Effects of zirconium doping on the structural, dielectric, ferroelectric, piezoelectric, and magnetic properties of lead-free 0.67BiFe0.97Ga0.03O3–0.33BaTi1−xZrxO3ceramics[J]. Journal of Materials Science: Materials in Electronics,2017,28(14):10212-10217.
APA Qin, Meng,Yan, Jian-Min,Wang, Fei-Fei,Liu, Yu-Kuai,&Zheng, Ren-Kui.(2017).Effects of zirconium doping on the structural, dielectric, ferroelectric, piezoelectric, and magnetic properties of lead-free 0.67BiFe0.97Ga0.03O3–0.33BaTi1−xZrxO3ceramics.Journal of Materials Science: Materials in Electronics,28(14),10212-10217.
MLA Qin, Meng,et al."Effects of zirconium doping on the structural, dielectric, ferroelectric, piezoelectric, and magnetic properties of lead-free 0.67BiFe0.97Ga0.03O3–0.33BaTi1−xZrxO3ceramics".Journal of Materials Science: Materials in Electronics 28.14(2017):10212-10217.
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