SWCNT-MoS2-SWCNT Vertical Point Heterostructures
Zhang, Jin1; Wei, Yang1; Yao, Fengrui2; Li, Dongqi1; Ma, He1; Lei, Peng1; Fang, Hehai3; Xiao, Xiaoyang1; Lu, Zhixing4; Yang, Juehan5; Li, Jingbo5; Jiao, Liying4; Hu, Weida3; Liu, Kaihui2; Liu, Kai6; Liu, Peng1; Li, Qunqing1,7; Lu, Wei3; Fan, Shoushan1,7; Jiang, Kaili1,7
Source PublicationAdvanced Materials
AbstractA crossed structure is employed to construct an SWCNT-MoS2-SWCNT vertical point heterostructure (VPH), in which a piece of 2D MoS2is sandwiched by two cross-stacked metallic SWCNTs. A thin layer of MoS2 is sandwiched between two cross-stacked metallic SWCNTs. A layer of horizontally aligned SWCNTs was first transferred from quartz to silicon substrate with 300 nm silica via poly(methyl methacrylate) (PMMA)-assisted transfer technique. A mechanically exfoliated MoS2layer was then transferred on the SWCNTs, followed by another SWCNT layer with alignment perpendicular to the first SWCNT layer. The VPHs with two metallic SWCNTs were efficiently identified by the type-dependent contrast of SWCNTs under scanning electron microscopy (SEM) and further checked by electrical measurements. Ti/Au electrodes on the two metallic SWCNTs were fabricated by electron beam lithography, electron beam evaporation, and lift-off procedure. The VPH devices were then isolated from the SWCNT networks by oxygen plasma treatment. The electrical transport properties of the VPH were studied under vacuum at room temperature. Atomic force microscopy (AFM) measurement indicates that the MoS2 flake is 19 nm in thickness and the SWCNTs were =1 nm in diameter. Experimental results indicate that the on/off ratio of the VPH field effect transistor (FET) ranges from 105 to 106 at room temperature and the current density through the VPH can be as high as 107 A cm-2. Furthermore, scanning photocurrent microscopy (SPCM) images reveal that the VPH can be applied as a light detector to plot a focused laser beam, showing its ability in spatial resolution.
EI Accession Number20165203183127
EI KeywordsLayered semiconductors
EI Classification Number714.2 Semiconductor Devices and Integrated Circuits - 741.3 Optical Devices and Systems - 744.8 Laser Beam Interactions - 761 Nanotechnology - 804.1 Organic Compounds - 819.4 Fiber Products - 932.3 Plasma Physics
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Cited Times:6[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Affiliation1.State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing; 100084, China;
2.State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing; 100871, China;
3.National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai; 200083, China;
4.Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing; 100084, China;
5.State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China;
6.State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing; 100084, China;
7.Collaborative Innovation Center of Quantum Matter, Beijing; 100084, China
Recommended Citation
GB/T 7714
Zhang, Jin,Wei, Yang,Yao, Fengrui,et al. SWCNT-MoS2-SWCNT Vertical Point Heterostructures[J]. Advanced Materials,2017,29(7).
APA Zhang, Jin.,Wei, Yang.,Yao, Fengrui.,Li, Dongqi.,Ma, He.,...&Jiang, Kaili.(2017).SWCNT-MoS2-SWCNT Vertical Point Heterostructures.Advanced Materials,29(7).
MLA Zhang, Jin,et al."SWCNT-MoS2-SWCNT Vertical Point Heterostructures".Advanced Materials 29.7(2017).
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