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The effect of SiO2on electrical properties of low-temperature-sintered ZnO–Bi2O3–TiO2–Co2O3–MnO2-based ceramics
Bai, Hairui1; Zhang, Minghui1; Xu, Zhijun1; Chu, Ruiqing1; Hao, Jigong1; Li, Huaiyong1; Gong, Yunyun1; Li, Guorong2
2017
发表期刊Journal of the American Ceramic Society
ISSN00027820
卷号100期号:3页码:1057-1064
摘要ZnO–Bi2O3–TiO2–Co2O3–MnO2-based (ZBTCM) varistors were fabricated via the conventional solid-state method, and the effect of SiO2content on the phase transformation, microstructure, and electrical properties of the ZBTCM had been investigated. Results showed that this varistor can be sintered at a low temperature of 880°C with a high sintering density above 0.95 of the ZnO theoretical density. In these components, SiO2acts as a controller in ZnO grain growth, decreasing the grain size of ZnO from 3.67 to 1.92 μm, which in turn results in an increase in breakdown voltage E1mAfrom 358.11 to 1080 V/mm. On the other hand, SiO2has a significant influence on the defect structure and component distribution at grain-boundary regions. When SiO2content increases from 0 to 4 wt%, the value of the interface state density (Ns) increases sharply. At the same time, the electrical properties are improved gradually, and reach an optimized value with the nonlinear coefficient (α) up to 54.18, the barrier height (b) up to 2.90 eV, and the leakage current (IL) down to 0.193 μA/cm2. © 2016 The American Ceramic Society
DOI10.1111/jace.14575
EI入藏号20170203234962
EI主题词Temperature
EI分类号549.3 Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals - 641.1 Thermodynamics - 714.2 Semiconductor Devices and Integrated Circuits - 804 Chemical Products Generally - 804.2 Inorganic Compounds - 931 Classical Physics ; Quantum Theory ; Relativity - 932 High Energy Physics ; Nuclear Physics ; Plasma Physics - 933.1.2 Crystal Growth
引用统计
被引频次:1[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.sic.ac.cn/handle/331005/25571
专题中国科学院上海硅酸盐研究所
作者单位1.College of Materials Science and Engineering, Liaocheng University, Liaocheng, China;
2.The State Key Lab of High Performance Ceramics and Superfinemicrostructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai, China
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Bai, Hairui,Zhang, Minghui,Xu, Zhijun,等. The effect of SiO2on electrical properties of low-temperature-sintered ZnO–Bi2O3–TiO2–Co2O3–MnO2-based ceramics[J]. Journal of the American Ceramic Society,2017,100(3):1057-1064.
APA Bai, Hairui.,Zhang, Minghui.,Xu, Zhijun.,Chu, Ruiqing.,Hao, Jigong.,...&Li, Guorong.(2017).The effect of SiO2on electrical properties of low-temperature-sintered ZnO–Bi2O3–TiO2–Co2O3–MnO2-based ceramics.Journal of the American Ceramic Society,100(3),1057-1064.
MLA Bai, Hairui,et al."The effect of SiO2on electrical properties of low-temperature-sintered ZnO–Bi2O3–TiO2–Co2O3–MnO2-based ceramics".Journal of the American Ceramic Society 100.3(2017):1057-1064.
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