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Diode-pumped laser performance of Tm:Sc2SiO5crystal at 1971 nm
Liu, Bin1; Zheng, Li-He2; Wang, Qing-Guo1,3; Liu, Jun-Fang4; Su, Liang-Bi2; Tang, Hui-Li1,3; Liu, Jie5; Fan, Xiu-Wei5; Wu, Feng1,3; Luo, Ping1,3; Zhao, Heng-Yu1; Shi, Jiao-Jiao1; He, Nuo-Tian1; Li, Na1; Li, Qiu1; Guo, Chao1; Xu, Xiao-Dong6; Wang, Zhan-Shan1; Xu, Jun1,3
2017
Source PublicationChinese Physics B
ISSN16741056
Volume26Issue:8
AbstractThe 4-at.% Tm:Sc2SiO5 (Tm:SSO) crystal is successfully obtained by the Czochralski method. The optical properties and thermal conductivity of the crystal are investigated. The broad continuous wave (CW) laser output of (100)-cut Tm:SSO with the dimensions of 3 mm×3 mm×3 mm under laser diode (LD)-pumping is realized. The full width at half maximum (FWHM) of the laser emitting reaches up to 21 nm. The laser threshold of Tm:SSO is measured to be 0.43 W. Efficient diode-pumped CW laser performance of Tm:SSO is demonstrated with a slope efficiency of 25.9% and maximum output power of 934 mW. © 2017 Chinese Physical Society and IOP Publishing Ltd.
DOI10.1088/1674-1056/26/8/084203
EI Accession Number20173304051710
EI KeywordsPumping (laser)
EI Classification Number741.1 Light/Optics - 744.1 Lasers, General - 933.1.2 Crystal Growth
Citation statistics
Cited Times:5[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sic.ac.cn/handle/331005/25522
Collection中国科学院上海硅酸盐研究所
Affiliation1.School of Physics Science and Engineering, Institute for Advanced Study, Tongji University, Shanghai; 200092, China;
2.Key Laboratory of Transparent and Opto-Functional Advanced Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai; 201800, China;
3.Shanghai Engineering Research Center for Sapphire Crystals, Shanghai; 201899, China;
4.School of Materials Science and Engineering, Tongji University, Shanghai; 200092, China;
5.College of Physics and Electronics, Shandong Normal University, Jinan; 250014, China;
6.Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou; 221116, China
Recommended Citation
GB/T 7714
Liu, Bin,Zheng, Li-He,Wang, Qing-Guo,et al. Diode-pumped laser performance of Tm:Sc2SiO5crystal at 1971 nm[J]. Chinese Physics B,2017,26(8).
APA Liu, Bin.,Zheng, Li-He.,Wang, Qing-Guo.,Liu, Jun-Fang.,Su, Liang-Bi.,...&Xu, Jun.(2017).Diode-pumped laser performance of Tm:Sc2SiO5crystal at 1971 nm.Chinese Physics B,26(8).
MLA Liu, Bin,et al."Diode-pumped laser performance of Tm:Sc2SiO5crystal at 1971 nm".Chinese Physics B 26.8(2017).
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