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Tape casting of Si3N4sheets for potential use as circuit substrate for power devices
Zhang, J.; Duan, Y.; Li, X.; Jiang, D.
2017
Source PublicationJournal of Ceramic Science and Technology
ISSN21909385
Volume8Issue:1Pages:149-154
AbstractSi3N4ceramics exhibit superior mechanical and electrical properties and potentially high thermal conductivity (200 - 320 W/m/K) at room temperature. They are an excellent prospective circuit substrate for power electronic devices. The literature reports that a great deal of work has been conducted on Si3N4, and Si3N4ceramics with thermal conductivity as high as 177 W/m/K have been realized. One of the main barriers for the application of Si3N4is the high cost of their fabrication. Tape casting is a flexible technique for the preparation of ceramic sheets with well-controlled composition and dimensions, and presents a prospective route for the development of Si3N4substrate at reduced cost. In this study, Si3N4substrate was prepared by means of tape casting and the sintered reaction-bonded silicon nitride (SRBSN) technique. Initially, silicon green tapes were prepared by means of organic-solvent-based tape casting. The influences of binder content, plasticizer/binder ratio and solid loading on the tape properties were investigated and optimized. Subsequently, the nitration and sintering process was optimized. The microstructure and thermal properties of the Si3N4ceramics were investigated. Results showed that the preparation of Si3N4ceramics by means of tape casting and the reaction-bonded silicon nitride (SRBSN) technique is feasible. © 2017 Göller Verlag.
DOI10.4416/JCST2016-00120
EI Accession Number20171503549953
EI KeywordsSubstrates
EI Classification Number641.1 Thermodynamics - 706.1 Electric Power Systems - 713.4 Pulse Circuits - 802.2 Chemical Reactions - 804.2 Inorganic Compounds - 812.1 Ceramics
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Document Type期刊论文
Identifierhttp://ir.sic.ac.cn/handle/331005/25497
Collection中国科学院上海硅酸盐研究所
AffiliationState Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, 1295 Dingxi Road, Shanghai; 200050, China
Recommended Citation
GB/T 7714
Zhang, J.,Duan, Y.,Li, X.,et al. Tape casting of Si3N4sheets for potential use as circuit substrate for power devices[J]. Journal of Ceramic Science and Technology,2017,8(1):149-154.
APA Zhang, J.,Duan, Y.,Li, X.,&Jiang, D..(2017).Tape casting of Si3N4sheets for potential use as circuit substrate for power devices.Journal of Ceramic Science and Technology,8(1),149-154.
MLA Zhang, J.,et al."Tape casting of Si3N4sheets for potential use as circuit substrate for power devices".Journal of Ceramic Science and Technology 8.1(2017):149-154.
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