SIC OpenIR
High-peak power passively Q-switched 2-μm laser with MoS2saturable absorber
Luan, Chao1; Zhang, Xiaoyan2; Yang, Kejian3; Zhao, Jia1; Zhao, Shengzhi1; Li, Tao1; Qiao, Wenchao1; Chu, Hongwei1; Qiao, Junpeng1; Wang, Jun2; Zheng, Lihe4; Xu, Xiaodong5; Xu, Jun6
2017
Source PublicationIEEE Journal of Selected Topics in Quantum Electronics
ISSN07921233
Volume23Issue:1
AbstractThe passive Q-switching characteristics of a diode-pumped Tm,Ho:YAP laser at 2 μm based on a MoS2saturable absorber (SA) is presented for the first time. Pulses as short as 435 ns under a repetition rate of about 55 kHz were generated at the incident pump power of 8.4 W, corresponding to the pulse peak power up to 11.3 W. This is, to the best of our knowledge, the highest pulse peak power, ever obtained from MoS2based passively Q-switched 2-μm lasers. The experimental results sufficiently validated the feasibility of MoS2as SA for solid-state 2-μm lasers. © 1995-2012 IEEE.
DOI10.1109/JSTQE.2016.2537980
EI Accession Number20163702783879
EI KeywordsYttrium compounds
EI Classification Number744 Lasers
Citation statistics
Cited Times:19[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sic.ac.cn/handle/331005/25472
Collection中国科学院上海硅酸盐研究所
Affiliation1.School of Information Science and Engineering, Shandong Provincial Key Laboratory of Laser Technology and Application, Shandong University, Jinan; 250100, China;
2.Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai; 201800, China;
3.State Key laboratory of Crystal Material, School of Information Science and Engineering and, Shandong University, Jinan; 250100, China;
4.Key Laboratory of Transparent and Opto-functional Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai; 200050, China;
5.Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou; 221116, China;
6.Institute for Advanced Study, School of Physics Science and Engineering, Tongji University, Shanghai; 200092, China
Recommended Citation
GB/T 7714
Luan, Chao,Zhang, Xiaoyan,Yang, Kejian,et al. High-peak power passively Q-switched 2-μm laser with MoS2saturable absorber[J]. IEEE Journal of Selected Topics in Quantum Electronics,2017,23(1).
APA Luan, Chao.,Zhang, Xiaoyan.,Yang, Kejian.,Zhao, Jia.,Zhao, Shengzhi.,...&Xu, Jun.(2017).High-peak power passively Q-switched 2-μm laser with MoS2saturable absorber.IEEE Journal of Selected Topics in Quantum Electronics,23(1).
MLA Luan, Chao,et al."High-peak power passively Q-switched 2-μm laser with MoS2saturable absorber".IEEE Journal of Selected Topics in Quantum Electronics 23.1(2017).
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Luan, Chao]'s Articles
[Zhang, Xiaoyan]'s Articles
[Yang, Kejian]'s Articles
Baidu academic
Similar articles in Baidu academic
[Luan, Chao]'s Articles
[Zhang, Xiaoyan]'s Articles
[Yang, Kejian]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Luan, Chao]'s Articles
[Zhang, Xiaoyan]'s Articles
[Yang, Kejian]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.