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High-peak power passively Q-switched 2-μm laser with MoS2saturable absorber
Luan, Chao1; Zhang, Xiaoyan2; Yang, Kejian3; Zhao, Jia1; Zhao, Shengzhi1; Li, Tao1; Qiao, Wenchao1; Chu, Hongwei1; Qiao, Junpeng1; Wang, Jun2; Zheng, Lihe4; Xu, Xiaodong5; Xu, Jun6
2017
发表期刊IEEE Journal of Selected Topics in Quantum Electronics
ISSN07921233
卷号23期号:1
摘要The passive Q-switching characteristics of a diode-pumped Tm,Ho:YAP laser at 2 μm based on a MoS2saturable absorber (SA) is presented for the first time. Pulses as short as 435 ns under a repetition rate of about 55 kHz were generated at the incident pump power of 8.4 W, corresponding to the pulse peak power up to 11.3 W. This is, to the best of our knowledge, the highest pulse peak power, ever obtained from MoS2based passively Q-switched 2-μm lasers. The experimental results sufficiently validated the feasibility of MoS2as SA for solid-state 2-μm lasers. © 1995-2012 IEEE.
DOI10.1109/JSTQE.2016.2537980
EI入藏号20163702783879
EI主题词Yttrium compounds
EI分类号744 Lasers
引用统计
文献类型期刊论文
条目标识符http://ir.sic.ac.cn/handle/331005/25472
专题中国科学院上海硅酸盐研究所
作者单位1.School of Information Science and Engineering, Shandong Provincial Key Laboratory of Laser Technology and Application, Shandong University, Jinan; 250100, China;
2.Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai; 201800, China;
3.State Key laboratory of Crystal Material, School of Information Science and Engineering and, Shandong University, Jinan; 250100, China;
4.Key Laboratory of Transparent and Opto-functional Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai; 200050, China;
5.Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou; 221116, China;
6.Institute for Advanced Study, School of Physics Science and Engineering, Tongji University, Shanghai; 200092, China
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Luan, Chao,Zhang, Xiaoyan,Yang, Kejian,et al. High-peak power passively Q-switched 2-μm laser with MoS2saturable absorber[J]. IEEE Journal of Selected Topics in Quantum Electronics,2017,23(1).
APA Luan, Chao.,Zhang, Xiaoyan.,Yang, Kejian.,Zhao, Jia.,Zhao, Shengzhi.,...&Xu, Jun.(2017).High-peak power passively Q-switched 2-μm laser with MoS2saturable absorber.IEEE Journal of Selected Topics in Quantum Electronics,23(1).
MLA Luan, Chao,et al."High-peak power passively Q-switched 2-μm laser with MoS2saturable absorber".IEEE Journal of Selected Topics in Quantum Electronics 23.1(2017).
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